硅外延的英文

• silicon epitaxy

• "硅"英文翻译    silicon
• "硅外延材料" 英文翻译 :    siliconepitaxymaterial
• "硅外延片" 英文翻译 :    silicon extending slice
• "硅外延平面晶体管" 英文翻译 :    silicone epitaxial planar tra istor; silicone epitaxial planar transistor
• "硅外延大电流开关二极管" 英文翻译 :    silicon epitaxial highcurrent switching diode
• "英寸硅外延片技改扩产" 英文翻译 :    technical renovation and production expansion project on 6～inch silicon epitaxial wafers
• "外延" 英文翻译 :    denotation; epitaxy; [逻辑学] extension: ""plant"" 是一个外延较大的词。""plant"" is a word with wide extension
• "等外延" 英文翻译 :    homepitaxy
• "空外延" 英文翻译 :    null extension
• "同外延" 英文翻译 :    homepitaxy
• "外延槽" 英文翻译 :    epitaxial bath
• "外延层" 英文翻译 :    epilayer; epitaxial layer; layer, epitaxial
• "外延迟" 英文翻译 :    external delays
• "外延岛" 英文翻译 :    epi island
• "外延的" 英文翻译 :    denotative; epitaxial; extensional; extensive
• "外延法" 英文翻译 :    epitaxial method; extrapolation
• "外延管" 英文翻译 :    extended tube
• "外延硅" 英文翻译 :    epitaxial silicon
• "外延结" 英文翻译 :    epitaxial junction; epitaxially grown junction
• "外延量" 英文翻译 :    extension amount; extensive amount; extensive quantity
• "外延炉" 英文翻译 :    epitaxial furnace
• "外延膜" 英文翻译 :    epifilm; epitaxial film; epitaxially grown film
• "外延片" 英文翻译 :    epitaxial slice; epitaxial wafer
• "外延区" 英文翻译 :    epitaxial region
• "外延网" 英文翻译 :    extranets

• Specification for silicon epitaxial wafer for microwave power transistor
  微波功率晶体管用硅外延片规范
• Silicon extending slice
  硅外延片
• Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
  硅外延层电阻率的面接触三探针.测试方法
• The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer
  本文的具体工作可归纳为： 1 )薄硅外延片研制高频肖特基二极管的原型器件。
• B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
  B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。
• Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
  半导体无机材料的试验.用红外线干涉法测量硅外延生长
• A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
  A )利用超高真空化学气相沉积( uhv - cvd )技术在重掺si衬底上生长高晶体质量的亚微米级薄硅外延片。
• Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
  然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。
• As a result , the cutoff frequency of sbd is limited at a lower level . now , we can grow sub - micro film of silicon using uhv / cvd technology . then we make an original device sbd of high frequency
  现在，我们浙江大学硅材料国家重点实验室利用uhv cvd技术，生长出亚微米厚的薄硅外延层，在此外延层上研制出高频肖特基二极管原型器件。
• Because of the limitation of thin silicon film epitaxial technology , it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time , which makes the series resistance large
  但长期以来，由于薄硅外延生长技术的限制，无法生长出优质的厚度小于2 m的薄硅外延层，使硅肖特基二极管的串联电阻无法降的更低，限制了其截止频率的提高。

• 硅外延的日语：シリコンエピタキシャル