3 . finally , we explore a serial of other fabrication technology of sbd of high frequency , including oxidation techniques , photoetching techniques and vacuum deposition . an original sbd of high frequency has been made 最后，利用所生长的薄硅外延片，探索出其它一系列相关的高频肖特基二极管的制作工艺，包括氧化工艺、光刻工艺、真空镀膜工艺等，制作出了高频肖特基二极管的原型器件。
After optimizing the epitaixal condition , low temperature bonding , splitting and removing of porous silicon , soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal , and its thickness is uniform 优化了外延条件，结合低温键合与多孔硅的剥离技术，在国内首次用多孔硅外延层转移技术成功地制备出了soi材料。分析表明， eltran - soi的顶层硅厚度均匀，单晶质量优良；界面清晰、陡直；电学特性优异。
According to the requirement of innovation engineering in chinese academy of sciences , the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon , and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon , including the microstructure , ciystallinity and surface morphology , has been studied systematically . it is found that the porous silicon and substrate have the same orientation and share a coherent boundary . but at the edge of pores , the lattice relaxes , which induces xrd peak moving of porous silicon Soi技术和多孔硅纳米发光技术研究是当今微电子与光电子研究领域的前沿课题，本文根据科学院创新工程研究工作的需要，开展了多孔硅外延层转移eltran - soi新材料制备与改性多孔硅发光性能的研究，获得的主要结果如下：系统研究了硅片掺杂浓度、掺杂类型和阳极氧化条件等因素对多孔硅结构、单晶性能和表面状态的影响，发现多孔硅与衬底并不是严格的四方畸变，在多孔硅/硅衬底的界面上，多孔硅的晶格与衬底完全一致，但在孔的边缘，多孔硅的晶格发生弛豫。
