热退火的英文

• thermal annealing

• "退火"英文翻译    anneal; annealing; back-out
• "灯加热退火" 英文翻译 :    lamannealing
• "电热退火" 英文翻译 :    electric annealing
• "过热退火的" 英文翻译 :    overannealed
• "快速热退火" 英文翻译 :    rta
• "迅速热退火" 英文翻译 :    rta: rapid thermal anneal
• "焰热退火" 英文翻译 :    gas annealing
• "自热退火" 英文翻译 :    spontaneous annealing
• "自热退火炉" 英文翻译 :    heatless lehr
• "电阻加热退火" 英文翻译 :    resistance annealing
• "感应加热退火" 英文翻译 :    induction annealing
• "快速加热退火" 英文翻译 :    flash annealing
• "明焰加热退火" 英文翻译 :    flame annealing
• "接触电加热退火" 英文翻译 :    resistance annealing
• "直接通电加热退火（仅用于热电偶丝）" 英文翻译 :    electric annealing
• "热退磁" 英文翻译 :    thermal demagnetization
• "热退解" 英文翻译 :    thermal degradation
• "热退期" 英文翻译 :    defervescence; defervescent stage
• "退火" 英文翻译 :    [冶金学] anneal; annealing; back-out
• "绝热退磁" 英文翻译 :    adiabatic demagnetization
• "清热退蒸" 英文翻译 :    clearing deficient heat
• "热退解技术" 英文翻译 :    thermal degradation techniques
• "热退解温度" 英文翻译 :    thermal degradation temperature
• "绝热退磁作用" 英文翻译 :    adiabatic demagnetization
• "白退火" 英文翻译 :    white annealing

• It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing
  有报道称采用离子注入的方法将mn ~ +注入到gaas单晶衬底中，经过快速热退火处理后，发现在晶体中生成了mnas第二相。
• Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films , also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer
  薄膜区：专门沉积“介电层” ， “金属层”等导电或不导电薄膜的区域，并兼做晶圆表面器件之平坦化及高（低）温快速热退火制程。
• The development of solar cells is showing a tendency to improve efficiency and reduce cost . crystal silicon solar cells are considered the most promising cells in the future for their advantages , such as high efficiency , great stability , simple processing , and none - pollution
  主要工作包括三个部分：首先研究了不同温度的热退火对于硅片氧碳含量和少子寿命的影响，然后将热处理过程应用于常规太阳电池的制备工艺，制出太阳电池。
• In this paper , we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time . studied the different annealing condition dependence of the samples " structure , electrical and magnetic properties and the relation of the mn + forms and these properties
  本课题采用离子注入的方法将不同剂量的mn ~ +注入到非掺杂半绝缘( 100 ) gaas单晶衬底中，然后进行不同温度和时间的快速热退火处理，研究了不同的退火条件对样品注入层的晶体结构、电特性和磁特性的影响以及mn ~ +在样品中的存在状态与这些性质之间的关系。
• To achieve this aim , the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis . three parts are studied in our work , firstly , the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied , then put it into the process of solar cell and compare the capability of solar cell in two process
  作为该项研究的先期工作，首先以p型( 100 )太阳电池用直拉硅片为实验样品，摸索出热退火的最佳处理温度；然后用常规工艺制备了单晶硅太阳电池，测试效率；结果发现用经过热处理的硅片衬底制备的太阳电池比用没有经过热处理的硅片衬底制备的太阳电池其效率有明显改善。
• The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes , then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0 . 5 l / min ) at the temperature 400 for 30 s
  N型( 80 - 100 ? cm )硅片刻蚀后的多孔硅在胺液中浸泡20min ，然后在氧化炉中进行热退火，退火温度在400时， o _ 2流量为0 . 5l / min的条件下退火30秒，在紫外灯照射下，所得ps发蓝白光。
• With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ) , rtp ( rapid thermal process ) , which consumes less time and less energy than classical thermal treatments , have been widely employed in semiconductor manufacturing . however , the most importance is that rtp is applied for defects engineering of silicon material . it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer , and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
  随着大规模集成电路( vlsi )和超大规模集成电路的发展，节省时间、节省能量、容易控制的快速热退火工艺在半导体器件制造工艺中得到了广泛的应用，并且在硅材料的缺陷工程中发挥了特殊的作用，人们通过高温快速热处理在硅片中引入空位，并控制空位的分布，进而形成了具有较强内吸杂能力的洁净区。