快速热退火的英文

• rta

• "快速"英文翻译    fast; quick; high-speed; spe ...
• "退火"英文翻译    anneal; annealing; back-out
• "迅速热退火" 英文翻译 :    rta: rapid thermal anneal
• "快速加热退火" 英文翻译 :    flash annealing
• "热退火" 英文翻译 :    thermal annealing
• "灯加热退火" 英文翻译 :    lamannealing
• "电热退火" 英文翻译 :    electric annealing
• "过热退火的" 英文翻译 :    overannealed
• "焰热退火" 英文翻译 :    gas annealing
• "自热退火" 英文翻译 :    spontaneous annealing
• "自热退火炉" 英文翻译 :    heatless lehr
• "电阻加热退火" 英文翻译 :    resistance annealing
• "感应加热退火" 英文翻译 :    induction annealing
• "明焰加热退火" 英文翻译 :    flame annealing
• "快速热处理" 英文翻译 :    fast cycle heat treatment; processing, rapid thermal (rtp); rapid thermal processing (rtp); rtp
• "快速热电偶" 英文翻译 :    fast thermocouple
• "快速热分析" 英文翻译 :    high speed thermal analysis
• "快速热水炉" 英文翻译 :    non-storage water heater
• "快速热丝" 英文翻译 :    quick heater
• "快速热氧化" 英文翻译 :    rto
• "接触电加热退火" 英文翻译 :    resistance annealing
• "快速热交换装置" 英文翻译 :    qhs quick hot swap
• "快速热欧姆转换" 英文翻译 :    fft(fast fourier transform
• "煤气快速热水器" 英文翻译 :    rapid gas water heater
• "快速退火" 英文翻译 :    flash annealing; rapid annealing; short annealing; short cycle malleable iron

• It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing
  有报道称采用离子注入的方法将mn ~ +注入到gaas单晶衬底中，经过快速热退火处理后，发现在晶体中生成了mnas第二相。
• Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films , also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer
  薄膜区：专门沉积“介电层” ， “金属层”等导电或不导电薄膜的区域，并兼做晶圆表面器件之平坦化及高（低）温快速热退火制程。
• In this paper , we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time . studied the different annealing condition dependence of the samples " structure , electrical and magnetic properties and the relation of the mn + forms and these properties
  本课题采用离子注入的方法将不同剂量的mn ~ +注入到非掺杂半绝缘( 100 ) gaas单晶衬底中，然后进行不同温度和时间的快速热退火处理，研究了不同的退火条件对样品注入层的晶体结构、电特性和磁特性的影响以及mn ~ +在样品中的存在状态与这些性质之间的关系。
• With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ) , rtp ( rapid thermal process ) , which consumes less time and less energy than classical thermal treatments , have been widely employed in semiconductor manufacturing . however , the most importance is that rtp is applied for defects engineering of silicon material . it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer , and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
  随着大规模集成电路( vlsi )和超大规模集成电路的发展，节省时间、节省能量、容易控制的快速热退火工艺在半导体器件制造工艺中得到了广泛的应用，并且在硅材料的缺陷工程中发挥了特殊的作用，人们通过高温快速热处理在硅片中引入空位，并控制空位的分布，进而形成了具有较强内吸杂能力的洁净区。