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快速退火的英文

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"快速退火"怎么读用"快速退火"造句

英文翻译手机手机版

  • flash annealing
  • rapid annealing
  • short annealing
  • short cycle malleable iron

例句与用法

  • 1 advanced ag610 rapid thermal processing system
    高级的ag610快速退火炉系统
  • Design of rapid thermal processing for ions implanted silicon
    快速退火炉离子注入退火工艺设计
  • The main work is as the follows : 1 . perovskite batio3 thin films are grown on sio2 / si ( 111 ) substrates by sol - gel process and rapid thermal annealing ( rta ) technique
    主要工作如下: 1 .用溶胶-凝胶法和快速退火工艺在sio2 / si ( 111 )基片上生长了钙钛矿结构batio3薄膜。
  • Rapid thermal treatment was found to greatly reduce leakage current down to 2 orders . and a combinatorial approach was applied to study the dielectric property change with varied bi implantation dose
    快速退火代替管式炉退火大幅度改善了其漏电性能,降低漏电流2个数量级以上。
  • Wang yongqian , liao xianbo , ma zhixun , et al . solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ] . applied surface science , 1998 135 : 205
    薛清,郁伟中,黄远明.利用快速退火法从非晶硅薄膜中生长纳米硅晶粒[ j ] .物理实验, 200222 ( 8 ) : 17
  • At first , the principle and the convergence feature of gibbs sampler are discussed ; and then , some fast annealing algorithms , such as metropolis method , the icm method and the hcf method , are studied carefully
    首先讨论了gibbs采样器的概念和收敛性,然后在此基础上详细研究了metropolis算法、 icm算法以及hcf算法等快速退火算法。
  • ( 3 ) the analysis results of xrd , sem indicated that the ni - pd coating formed a fcc structure . after annealing at 200 ? , a little amount of pdsi was precipitated in the coating . the surface image of ni - pd coating was utricle
    ( 3 )利用xrd 、 sem 、 aes等手段对ni - pd合金镀层的结构、表面形貌、成分进行了分析,结果表明ni - pd合金镀层形成了面心立方的固溶体结构,镀层经过200快速退火后,有少量pd的硅化物( pdsi )析出。
  • Lead lanthanum titanate ( plt ) ferroelectric thin film has superior pyroelectric , ferroelectric , piezoelectric and photoelectric characteristics , and it has been wildly used for various electromic equipments , such as pyroelectric ir detectors , dynamic random access memories ( drams ) and electrooptic apparatus
    采用射频磁控溅射法,分别通过快速退火和传统退火工艺,在5英寸的pt / ti / sio2 / si基片上制得具有不同微结构与性能的plt薄膜。
  • In addition , the effect of rapid thermal annealing ( rta ) on the fpds density and the annihilation mechanism of fpds were also studied in this paper . the rta results suggest fpd was very stable under 1100 c but above 1100 c , the fpd density was decreased deeply by the rta processing , and the longer the annealing time was , the lower the fpd density was
    Ar气氛下对硅片进行的快速退火( rapidthermalannealing , rta )的实验表明, fpds缺陷在1100以下非常稳定,但是,在1100以上的温度对硅片进行rta处理后,硅片中fpds的密度大大降低,而且随着的退火时间的延长,密度不断下降。
  • In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
    Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。
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用"快速退火"造句  
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