射频溅射的英文

• radio frequency sputtering
• radio-frequency sputtering
• rf sputtering

• "射频"英文翻译    radio frequency
• "溅射"英文翻译    sputtering; spurting; disint ...
• "对射频溅射" 英文翻译 :    rf double sputtering
• "双射频溅射" 英文翻译 :    rf double sputtering
• "高频溅射设备" 英文翻译 :    high-frequency sputtering equipment
• "溅射" 英文翻译 :    [半] sputtering; spurting; disintegration; spotter
• "射频" 英文翻译 :    [讯] radio frequency◇射频变换器 radio converter; 射频变压器 radio-frequency transformer; [电磁] radio transformer; 射频波道 radio channel; 射频电缆 radio-frequency cable; [电磁] radio-frequency line; 射频电流 radio-frequency current; 射频电流计 radio-frequency ammeter; 射频放大器 [电子学] radio-frequency amplifier (r. f. a.); rf amplifier; 射频放电 radio-frequency discharge; 射频辐射 radio-frequency radiation; 射频干扰 [讯] radio-frequency interference (rfi); 射频脉冲 [讯] radio-frequency pulse; radio pulse; 射频射线 radio-frequency ray; 射频衰减器 radio frequency attenuator; 射频陷波器 radio-frequency trap; 射频线圈 radio-frequency coil; 射频振荡 rf oscillation; 射频振荡器 radio-frequency oscillator; radio frequency generator; 射频质谱计 synchrometer; 射频质谱仪 radio-frequency mass spectrometer; 射频转换开关 radio-frequency switch
• "共溅射" 英文翻译 :    co-sputtering
• "溅射靶" 英文翻译 :    sputtering target
• "溅射泵" 英文翻译 :    sputter pump
• "溅射法" 英文翻译 :    sputter method
• "溅射率" 英文翻译 :    sputtering rate
• "溅射室" 英文翻译 :    sputtering chamber
• "溅射源" 英文翻译 :    sputtering source
• "冷溅射" 英文翻译 :    cool sputtering
• "薄膜溅射" 英文翻译 :    thin film sputtering
• "背面溅射" 英文翻译 :    back spatter
• "长抛溅射法" 英文翻译 :    long throw sputtering method
• "磁控管溅射" 英文翻译 :    magnetron sputtering
• "磁控溅射" 英文翻译 :    magnetron sputtering; megnetron sputtering
• "等离子溅射" 英文翻译 :    plasma spraying; plasma sputtering
• "电化学溅射" 英文翻译 :    electrochemical supttering
• "二极管溅射" 英文翻译 :    diode sputtering
• "二极溅射" 英文翻译 :    diode sputtering
• "反应溅射" 英文翻译 :    reactive sputtering

• Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
  用射频溅射法在si衬底上制备立方氮化硼，靶材为hbn ， 。工作气体为氩气。
• Cdte films deposited by close space sublimation have better appearance and larger grain than the films deposited by rf - sputtering and vacuum thermal evaporation
  近距离升华法制备的cdte薄膜与射频溅射和真空蒸发相比，具有其独有的特性。
• Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system , with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )
  使用射频溅射( rf )系统,靶材为烧结的六角氮化硼( hbn ) ,工作气体为氩气(或氩气和氮气的混合气) ,在硅衬底上沉积氮化硼薄膜。
• The realization of the algorithm drives the research of micro - electron structure . 2 . the la2o3 thin film is prepared by rf technology , the film is analyzed by arxps , the thickness is calculated by quantitative analysis software , the thickness of sio2 thin film between la2o3 and si is 0 . 6nm
  利用射频溅射镀膜技术在si片上制备了la _ 2o _ 3膜，通过变角xps分析和多层结构的定量计算，测得la _ 2o _ 3与si衬底之间的sio _ 2层厚度为0 . 6nm 。
• In the paper , the two - step approach , in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage , was used in order to synthesize c - bn film by the conventional js - 450a rf system . the influence of process parameters for nucleation and growth of depositing c - bn was studied separately
  本论文使用传统的js - 450a射频溅射系统利用两步法（降温降偏压法）沉积立方氮化硼薄膜，分别研究了各工艺参数对立方氮化硼成核和生长的影响。
• It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials , however , for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little . 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas , we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films , and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
  5实现了氮化硼薄膜的n型掺杂，成功制备出bn型）乃…型）异质结并且首次系统研究了其卜v和cv特性我们用射频溅射法溅射六角氨化硼靶，在工作气体氮和氮中混入s ，沉积氮化硼薄膜，以研究氮化硼薄膜的n型掺杂，并得到bnh型）侣i …型）异质结。
• The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system . the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them . i - v curves of bn / si heterojunctions were obtained by the high resistance meter , c - v curves of bn / si heterojunctions were obtained by the c - v meter
  使用rf射频溅射系统,在si衬底上沉积氮化硼薄膜,用离子注入的方法在制备好的bn薄膜中分别注入s和be ,成功的制备了bn / sin - p和bn / sip - p薄膜异质结,用高阻仪测得bn薄膜表面电阻率和bn / si薄膜异质结的i - v曲线,用c - v仪测得bn / si薄膜异质结的c - v曲线。