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透明电极的英文

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"透明电极"怎么读用"透明电极"造句

英文翻译手机手机版

  • clear electrode
  • transparency electrode

例句与用法

  • It puts forward the solution to solve the technical problem of the transparent electrode ( ito ) shadow
    通过光学计算和分析,提出了消除lcd透明电极( ito导电膜)阴影的方法。
  • Because of better conductivity , higher transparency , smoother surface and higher work function , ito ( indium tin oxide ) films are used as the transparent electrodes which are the emitting side in oled
    Oled显示器件经常采用ito膜作为有机发光的出射面和透明电极,要求ito膜可见光透过率、导电性、表面平整度以及功函数都很好。
  • The main transparent conductive oxide include indium tin oxide ( ito ) , al - doped zno ( azo ) , tin antimony oxide ( ato ) etc . ito is important material of making the transparent electrode
    目前应用广泛的透明导电氧化物薄膜主要有氧化铟锡薄膜( ito ) 、氧化锌铝膜( azo ) 、掺锑氧化锡( ato )等。铟锡氧化物( ito )是制造透明电极的重要材料。
  • Zno is a ii - vi semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , saw device , gas sensor and transparent electrodes et al for their excellent properties
    氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带ii - vi族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
  • Traditionally , zno is used as surface acoustic wave devices ( saw ) , bulk acoustic devices ( baw ) , gas sensors , varistors , transparent electrodes , uv - detectors , and etc . in recent years , zno has gained more and more attention as a wide band semiconductor
    传统上, zno薄膜被广泛应用于声表面波器件、体声波器件、气敏传感器、压敏电阻、透明电极、紫外探测器等领域。近年来, zno作为宽禁带半导体光电材料的研究越来越受到人们的重视。
  • However , it is necessary to deposit ito films at low substrate temperature because some displays can ’ t endure the high temperature which will damage the materials such as flexible substrates , organic inject materials , thin film transistors ( tft ) of oled devices , and so on
    然而,对于柔性oled 、顶发光oled 、有源矩阵oled等器件,必须在低温下沉积ito透明电极。本论文针对oled器件透明电极的要求,对ito膜的低温制备工艺进行了深入的研究。
  • The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature , 100w of sputtering power , 1 : 6 ratio of oxygen to nitrogen and 650 of annealing . the processing parameters of preparing sno2 film were room temperature of substrate temperature , 200w of sputtering power , 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature
    制备plzt电光薄膜的最佳工艺参数为:衬底温度400 ,溅射功率100w ,氧氩比为1 : 6 ,退火温度为650 ;而制备二氧化锡透明电极的最佳工艺参数为:衬底温度室温、溅射功率200w 、氧氩比为1 : 2 、退火温度为600 。
  • Uniform and compact plzt and sno _ 2 ceramic targets , which diameter were 212mm and 221mm , respectively , had been successfully fabricated . ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up , which showed high utilization efficiency of target , high films uniformity , and high deposition rate , etc . ( 3 ) the plzt and sno _ 2 thin films were investigated by afm , xrd , sem , and spectral photometer . the optimized processing parameters of preparing these films had been found
    并以此为基础分别制备了致密、均匀、平整、直径为212mm的plzt和221mm的sno _ 2陶瓷溅射靶材; ( 2 )为克服现有磁控溅射设备的不足,提出了一种新的磁控溅射方案,采用该方案的设备具有:靶材利用率高、镀膜均匀、成膜速度快等特点; ( 3 )运用afm 、 xrd 、 sem以及双光路分光光度计等分析手段对plzt和sno _ 2薄膜的微结构和性能进行研究,找到了制备plzt电光薄膜和sno2透明电极材料的最佳工艺条件。
  • Since 1990s , the rapid development of projector display and optical communications promotes the progress of photoelectric thin films , and more technology requests appear in the photoelectric coating field . in response to the demands of transparent electrode of solar cell , photoelectric thin films are prepared and discussed
    20世纪90年代以来,显示技术和光通讯技术的迅猛发展和产业化,极大的促进了光电薄膜的发展,同时对光电薄膜提出了更多更高的要求,论文针对太阳能透明电极的要求,对光电薄膜进行了制备和深入的研究。
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