辐射复合的英文

• radiation recombination
• radiative recombination

• "辐射"英文翻译    radiation; exposure; radio; ...
• "复合"英文翻译    compound; complex; composite ...
• "无辐射复合" 英文翻译 :    nonradiative recombination
• "辐射复合寿命" 英文翻译 :    radiative recombination lifetime
• "辐射复合系数" 英文翻译 :    radiative recombination coefficient
• "碰撞辐射复合" 英文翻译 :    collision-radiative recombination; collisional radiative recombination
• "等离子溅射复合刻蚀" 英文翻译 :    plasma sputter combined etching; pse
• "复合辐射" 英文翻译 :    recombination radiation
• "复合辐射谱" 英文翻译 :    recombination radiation spectrum
• "激子复合辐射" 英文翻译 :    exciton recombination radiation
• "受激复合辐射" 英文翻译 :    stimulated recombination radiation
• "自发复合辐射" 英文翻译 :    spontaneous recombination radiation
• "辐射适应复合抑制" 英文翻译 :    radial adaptive multiple suppression
• "平面衍射复制光栅" 英文翻译 :    replica of plane diffraction grating
• "复合" 英文翻译 :    compound; complex; composite; recombination; composition 这个词是由一个介词和一个动词复合而成的。the word is compounded of a preposition and a verb
• "辐射" 英文翻译 :    radiation; exposure; radio; beaming 电磁辐射 electromagnetic radiation; 受激辐射 stimulated radiation; 自发辐射 spontaneous radiation
• "复有心仿射平面, 有心仿射复平面" 英文翻译 :    complex centered affine plane
• "初辐射；原辐射" 英文翻译 :    primary radiation
• "辐射区，辐射带" 英文翻译 :    radiation band
• "辐射仪；辐射表" 英文翻译 :    radiometer
• "逆辐射,反辐射" 英文翻译 :    counter-radiation
• "全辐射；总辐射" 英文翻译 :    total radiation; totalradiation
• "alpha复合" 英文翻译 :    alpha compositing
• "壁复合" 英文翻译 :    wall recombination
• "产生-复合" 英文翻译 :    generation-recombination

• The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal .
  光致发光过程就是高能量光子照射到晶体上之后，晶体所产生的电子一空穴对的辐射复合过程。
• Mqw have the same effect on hb - led as dh , but better than that
  Mqw结构比dh结构更加有效的限制载流子，增加辐射复合效率。
• Owing to the field enhancement in the domain , the avalanching gain and recombination radiation are induced and the switches occur the special phenomenon of the lock - on effect
  由于单极电荷畴内电场强度增大，从而导致开关体内载流子雪崩倍增和辐射复合，引发了lock - on效应的特有现象。
• Applying dh can enhance the injection ratio , strengthen the confinement to the carrier and enhanced the efficiency of the recombination . this make the brightness greatly enhance
  Dh结构不仅提高了载流子注入比并且加强了载流子限制作用，提高了辐射复合的效率，使得hb - led的亮度大幅度提高。
• When the triggering light goes , the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers " conductive channel in the body of the devices and control the current of the lock - on switching
  当触发光脉冲消失后，单极电荷畴内雪崩电离和辐射复合在开关体内形成了载流子高导电通道，成为了载流子倍增的源泉，控制着lock - on电流。
• The isoelectronic system of gap : n has been investigated extensively in the dilute limit since 1965 . thomas et al identified that a series of sharp emission lines in gap : n were due to the recombinations of excitons bound to either isolated nitrogen centers or various nitrogen pair centers
  这些谱线来自于等电子杂质n形成的束缚激子态(孤立n中心和nn _ i对)辐射复合产生的零声子线及其声子伴线。
• Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex . furthermore , the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc , l ; lines related to dj - center were not observed with sample after postannealing at 1500 ? , the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs
  本文还对经幅照的p -型6h - sic的幅照退火特性进行了研究，在经过1500后退火的样品中没有观察到d _ i - center ，这可能是由于d _ i - center被实验中观察到的源于d - a对辐射复合的高强度的谱峰所掩盖。
• After a brief introduction to the excitation of semiconductor luminescence diode , the light - emitting machenisms of various new luminescence materials , including - and - semiconductor compounds and ps , the structures of different luminescence diodes , and their properties were discussed , and the application of semiconductor luminescence diode in modern science was presented
  在简介半导体发光二极管的辐射复合基础上，详细讨论了包括?族、 ?族化合物半导体材料和多孔硅( ps )等新发光材料在内的各种发光材料的发光机理、发光二极管的结构与特性.并介绍了半导体发光二极管在近代科学中的应用
• Bulk silicon has an indirect energy bandage and is therefore highly inefficient as a light source . it is hard to get the goal of luminescence devices . nanocrystalline silion ( nc - si ) have many difference from bulk silicon , such as structure , the capability of optics and photoelectricity
  单晶硅是间接带隙材料,其带间辐射复合效率非常低,难以达到发光器件的要求,与之相比,纳米硅晶在结构、光学及光电性能方面与单晶硅不同,它在发光器件、光探测器件、光电集成以及传感器等领域有更广阔的应用前景。
• With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
  用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在较低的电压万均观察到了室温可见电致发光现象，峰位都在510nm左右，其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响，表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。

• 辐射复合的日语：ほうしゃさいけつごう