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空穴的的英文

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"空穴的"怎么读用"空穴的"造句

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  • vugular

例句与用法

  • The cost for the deposition of the waste depends also upon the volume of the storage cavities and the maximum allowable radioactive concentration of the waste .
    废料处理费用还取决于贮存空穴的容积和允许的废料最大放射性浓度。
  • Dopant - an element that contributes an electron or a hole to the conduction process , thus altering the conductivity
    搀杂剂-可以为传导子电供提程过或空穴的元素,此元素可以改变传圆晶。
  • Dopant - an element that contributes an electron or a hole to the conduction process , thus altering the conductivity
    搀杂剂-可以为传导过程提供电子或空穴的元素,此元素可以改变传导特性。
  • Recently , with the rising of industrial safety criterion , it is emergent to further the research on cavitation characteristics in power system
    近年来,随着工业安全水准的提高,对于动力系统空穴的特性研究日益紧迫。
  • The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers
    研究结果表明:热空穴silc机制是由于氧化层空穴的退陷阱效应和正电荷辅助遂穿中心的湮灭。
  • The interaction will lead to tendency of an equilibration of energy over both of transverse and langmuir plasmons with the same frequencies near ( subscript p ) , which is agreement with our numerical analysis
    求出了强朗缪尔波的强度和密度空穴的尺度,结果与粒子模拟的预测结果及实验所测数据大致相符。
  • Tio2 film is antibacterial through photocatalysis . the silver doped tio2 film baffle the separate of electron and cavity , change the energy gap ' s framework of tio2 , and improve its activity performance of photocatalysis
    二氧化钛薄膜是光催化抗菌,掺银二浙江人学帧卜论义氧化钛薄膜阻止光生电子一光生空穴的分离,改变了tioz的能带结构,提高了它的光催化活性。
  • One is void - model fracture which is resulted from initial , dilatation and coalescence of voids in material . the fracture criterion of void - model fracture is vgc - criterion or ctodi - criterion , and its fracture angle is able to be determined by m - criterion
    韧窝型断裂由材料内空穴的形核、扩张和汇合造成,断裂判据可以采用“ v _ ( gc )准则”或ctod ~ i准则,断裂角可以采用m准则确定。
  • The author ' s main contributions are outlined as following : first , the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method . the changes of threshold voltage have been discussed under different stress conditions
    主要研究结果如下:首先,利用衬底热空穴( shh )注入技术分别控制注入到超薄栅氧化层中的热电子和空穴的数量,定量研究了热电子和空穴注入对超薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化。
  • According to the current problems such as low quantum efficiency . limited available sun energy spectrum range , and inefficient recovery , resulted from the practical using of photocatalysis , using the narrowband semiconductor cds ( eg = 2 . 5ev ) to compound with tio2 seems to be an effective solution . since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two , which makes the photo induced electron and holes separate more easily
    本文针对光催化技术应用中存在的tio _ 2光催化量子效率低,吸收利用太阳能光谱范围有限,催化剂回收困难等问题,通过窄禁带半导体cds ( e = 2 . 5ev )的复合,对纳米tio _ 2进行了改性研究,一方面,由于cds的窄禁带宽度可以扩展薄膜的光谱吸收范围,另一方面,由于能带的交叠,提高了光生电子和空穴的分离效率,从而提高了薄膜的光催化降解效率。
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