电荷区的英文

• charged region

• "电荷"英文翻译    electric charge; charge
• "区"英文翻译    H region; H
• "空间电荷区" 英文翻译 :    space charge region; space charge zone; space-charge region; spacechargezone
• "无空间电荷区" 英文翻译 :    space charge free region
• "负荷区" 英文翻译 :    loading area
• "电荷" 英文翻译 :    [物理学] electric charge; charge
• "伦敦苏荷区" 英文翻译 :    soho
• "轻负荷区" 英文翻译 :    light loaded district; lightloadeddistrict
• "中等负荷区" 英文翻译 :    medium loading district
• "中负荷区" 英文翻译 :    medium loading area; medium loading district
• "重负荷区" 英文翻译 :    heavy loading district
• "同步净负荷区包迹" 英文翻译 :    spe synchronous payload envelope
• "阳电荷，正电荷" 英文翻译 :    positive charge
• "阴电荷，负电荷" 英文翻译 :    negative charge
• "正电荷；阳电荷" 英文翻译 :    positive charge
• "比电荷" 英文翻译 :    charge mass ratio; ecificcharge; special charge; specific charge
• "层电荷" 英文翻译 :    layer charge
• "超电荷" 英文翻译 :    hypercharge
• "点电荷" 英文翻译 :    charge, point; point charge; point electric charge
• "电；电荷" 英文翻译 :    charge
• "电荷包" 英文翻译 :    charge packet
• "电荷泵" 英文翻译 :    charge pump
• "电荷差" 英文翻译 :    charge difference
• "电荷管" 英文翻译 :    chargistor
• "电荷库" 英文翻译 :    charge reservoir

• The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect , which can enhance the impurity ionization by lowing the effective barrier height
  把frenkel - pool效应引入了对sicmos表面空间电荷区杂质不完全离化的分析，并建立起了在电场作用下sic杂质离化的新的模型。
• Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
  研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。
• In respect of sic devices , an analytical model of 6h - sic jfet to well match the experimental results is proposed . the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal , mobility degradation and space charge density decrease
  对sicjfet的电参数如电子浓度，迁移率，电阻率和空间电荷区密度在中子辐照下的变化进行了分析，提出了中子辐照下6h - sicjfet的器件模型，利用此模型对sicjfet在室温和300时的辐照响应进行模拟的结果和实验值相符。