二次离子质谱的英文

• secondary ion mass spectrum

• "二次"英文翻译    secondary; quadratic
• "离子"英文翻译    ion
• "质谱"英文翻译    mass spectra; mass spectrum
• "二次离子质谱法" 英文翻译 :    second ion mass spectrometry; secondary ion mass spectrometry (sims)
• "二次离子质谱计" 英文翻译 :    secondary ion mass spectrometer (sims)
• "二次离子质谱学" 英文翻译 :    secondary ion mass spectroscopy
• "二次离子质谱仪" 英文翻译 :    ion microprobe; secondary ion mass spectrometer
• "动态二次离子质谱法" 英文翻译 :    dynamic sims; dynamic standard strain device
• "二次离子质谱测定法" 英文翻译 :    secondary ion mass spectrometry (sims)
• "二次离子质谱分析器" 英文翻译 :    secondary ion ma ectroanalyzer; secondary ion mass spectroanalyzer
• "静态二次离子质谱测定法" 英文翻译 :    static secondary ion mass spectrometry
• "静态二次离子质谱法" 英文翻译 :    static sims; static spring gravimeter
• "二次离子质量分析器" 英文翻译 :    second ion mass analyzer
• "二次离子成象质谱测定法" 英文翻译 :    secondary ion imaging mass spectrometry
• "二次离子探针质谱测定法" 英文翻译 :    secondary ion microprobe mass spectrometry
• "二次离子" 英文翻译 :    secondary ion
• "负离子质谱" 英文翻译 :    negative ion mass spectrum; negative-ion mass spectrum
• "离子质谱" 英文翻译 :    ion mass spectrum
• "离子质谱仪" 英文翻译 :    ion mass spectrometer
• "正离子质谱" 英文翻译 :    positive ion mass spectrum; positive ion mass speetrum
• "二次离子本底" 英文翻译 :    secondary ion background
• "二次离子谱法" 英文翻译 :    secondary ion spectroscopy; secondary limiting e.m.f
• "二次离子谱仪" 英文翻译 :    secondary ion spectrometer; secondary ion spectroscopy
• "场离子质谱学" 英文翻译 :    field ion mass spectroscopy; fims
• "次级离子质谱" 英文翻译 :    secondary ion mass spectrometry

• Secondary ion mass spectrometry
  二次离子质谱法
• Secondary ion mass spectrometer
  二次离子质谱计
• Among the destructive techniques able to provide the desired depth resolution the most widely used technique is secondary - ion - mass spectroscopy ( sims )
  在可以提供所希望的纵向分辨率的损伤技术中，最广泛运用的是二次离子质谱（ sims ） 。
• The sims , ir and raman analysis results show that the tritium permeation barrier ( tpb ) is formed when tic and sio2 films are annealed in hydrogen at about 350 ?
  利用二次离子质谱( sims ) 、红外吸收光谱( ir )及激光喇曼光谱( raman )技术，证实了tic和sio2在350左右的氢中退火可形成防氚渗透阻挡层。
• The conductivity , components and profile of the n - type diamond were characterized by hall effect , secondary ion mass spectrometry ( sims ) and the scanning electron microscopy ( sem )
  通过hall效应，二次离子质谱( sims )及扫描电子显微镜( sem )等多种技术手段，对n -型金刚石薄膜的导电特性、成分和薄膜的形貌等方面进行了表征。
• The main work includes four contents as follow : 1 ) the electrodes annealed in various temperatures were studied . with x - ray diffraction spectroscopy ( xrd ) and sims , the interfacial reaction is analyzed and a new two - step annealing method is suggested
  研究了al单层电极及ti al双层电极与蓝宝石基gan在不同退火条件下的欧姆接触情况，并用x射线衍射谱( xrd ) ，二次离子质谱( sims )对界面固相反应进行了分析。
• In this paper , germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer , sims , sem - edx , and the effective segregation coefficent of germanium under the situation of the changed speed was calculated , the result was 0 . 62 . according to the result , the curves of different ge concentrations were got
  本论文利用二次离子质谱( sims ) 、化学分析法(电感耦合等离子体( icp )直读光谱仪) 、扫描电镜能谱仪( sem - edx )三种方法对不同掺锗浓度的czsige单晶中锗含量进行了测试，并对变速拉晶条件下锗的有效分凝系数进行了计算，得出锗的有效分凝系数( ke )为0 . 62 。
• The experimental instruments , apparatus and the means to prepare all the samples are introduced in the first section . in section 2 , the experimental system including the oxidization system and diffusion system , are introduced therein . in section 3 , the samples preparation including the pre - deposition , redistribution and re - oxidization , the samples of b doping , and the fabrication of ga - diffusion transistor , b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein , and the as - prepared samples are analyzed by sims , srp and four point probe
  首先介绍了制备各种样品所用的实验仪器、设备与方法；第二节中介绍了实验系统，包括氧化系统、扩散系统，第三节介绍了样品的制备，包括ga的预沉积、再分布、二次氧化样品，扩硼样品，以及扩嫁晶体管、扩硼晶体管和扩镰后再补充扩硼晶体管的制备流程；实验所得样品，借助二次离子质谱（ sims ） 、扩展电阻（ srp ） 、四探针薄层电阻等先进的测试分析方法进行分析。
• The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions . by using xrd sims analytic methods and i - v measuremnet , we analysed the interface between metals and gan , and suggested that it is effect to decrease the value of the ohmic contact
  主要工作如下： 1 、研究了al单层及ti al双层电极与n型si基gan和al _ 2o _ 3基gan在不同退火条件下的欧姆接触情况，并用x射线衍射谱( xrd ) ，二次离子质谱( sims )对界面固相反应进行了分析。
• In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported , and its typical applications in the hgcdte material and devices processing , especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced
  摘要文章介绍了二次离子质谱仪的结构及其基本工作原理，并通过对典型应用的分析，介绍了二次离子质谱分析技术在高灵敏度碲镉汞红外焦平面探测器材料和器件制备工艺中的作用，特别是在结探监测和微量杂质监控方面所发挥的重要作用。

• 二次离子质谱的法语：Spectrométrie de masse des ions secondaires
• 二次离子质谱的俄语：Масс-спектрометрия вторичных ионов