Npn or pnp transistor output using a reliable , adjustable response time
Npn transistors are normally superior to their pnp counterpart in performance
According to negative temperature coefficient of vbe and positive temperature coefficient of vt , a framework of band - gap voltage reference is investigated . the reference offer a source of pir , distributed three voltage , one as upper - threshold voltage of dual - threshold comparator , the other as lower - threshold voltage of comparator , the other as direct current voltage for second band - pass filter amplifier
A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit . vertical pnp transistor whose base is epitaxy layer was used as output . the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact
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