集电结的英文

• collector base junction
• collector junction
• collector junonon

• "集"英文翻译    gather; assemble; collect
• "电"英文翻译    electricity
• "结"英文翻译    p-n junction
• "电结合" 英文翻译 :    electrical twinning
• "电结晶" 英文翻译 :    electrocrystallization
• "热电结" 英文翻译 :    thermojunction
• "静电结合" 英文翻译 :    electrostatic bonding
• "静电结合力" 英文翻译 :    electrostatic bond
• "热电结合" 英文翻译 :    thermoelectric bonding
• "闪电结婚" 英文翻译 :    flash marriage
• "送电结构" 英文翻译 :    aging power delivery infrastrutures
• "温差电结" 英文翻译 :    thermojunction
• "压电结晶" 英文翻译 :    piezocrystalization
• "馈电结绝缘子" 英文翻译 :    feeder insulator
• "集电板" 英文翻译 :    collector plates
• "集电的" 英文翻译 :    current collecting
• "集电杆" 英文翻译 :    trolley pole
• "集电弓" 英文翻译 :    bow; bow trolley; bow collector◇集电弓支架 bow frame
• "集电轨" 英文翻译 :    collector rail
• "集电环" 英文翻译 :    [电工] (滑环) bus ring; collector ring; ring collector; ring header; circular distributor ring
• "集电极" 英文翻译 :    [半] collector; collector [collecting] electrode; collecting anode; commutator◇集电极场 collecting field
• "集电级" 英文翻译 :    collector
• "集电路" 英文翻译 :    collector
• "集电片" 英文翻译 :    collector plate; collectorplate
• "集电屏" 英文翻译 :    collector screen

• The collector junction biased in the reverse direction .
  集电结是反向编置。
• The main works are as the follows . in view of the contradiction among frequency , output power and dissipation power , propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure
  主要工作包括以下几个方面：针对频率与功率、功耗的矛盾，提出了绝缘深阱结终端结构和梳状集电结(基区)结构。
• Experimental sample dct375 with collector - combed structure has better parameter such as icm , pq , pd and / r etc . than traditional - structure devices and overseas devices of the same kind . collector - combed structure technology opens up a new way for the further research of new high - frequency , microwave power devices
  研制出的梳状集电结(基区)结构试验管dct375 ，其最大电流容量、最大输出功率、最大耗散功率以及频率特性等电参数明显比传统结构器件和国外同类产品有大的提高。
• In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices . one is a typical of oc stress method with collector open and reverse - bias emitter - base junction . another one , a new technique , is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
  本论文采用两种反偏电应力方法考察器件的可靠性，一种为传统的oc应力（集电极开路，发射结反向偏置）方法，另一种为新的方法fc应力（集电结正向偏置，发射结反向偏置）方法。
• And the results of calculation and numerical simulation indicate , without increasing the intrinsic collector - junction area of power devices , collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter , improve heat - dissipating method of each cell of the chip , enhance the distribution uniformity of junction temperature and current of each cell of the chip , reduce the thermal resistance and raise the dissipation power pd and output power p0 , fairly well relax the contradiction among frequency , out - put power and dissipation power of the devices , and further improve the devices " property against second breakdown
  而计算分析和二维数值模拟分析结果表明：梳状集电结(基区)结构在不增加器件本征集电结面积的条件下，增大了器件的本征散热面积和基区周长，改进了每个子器件单元内的散热方式，提高了单元内结温和电流分布的均匀性，降低了器件的热阻，增大了器件的耗散功率和输出功率，较好地缓解了目前传统结构中频率与功率、功耗的矛盾，并有利于改善器件抗二次击穿的性能。