闭管的英文

• stopped pipe; closed tube [pipe]

• "闭"英文翻译    close; shut
• "管"英文翻译    pipe; tube
• "闭管法" 英文翻译 :    closed tube method; closed-tube method; closed-tubemethod
• "封闭管" 英文翻译 :    sealed tube
• "关闭管" 英文翻译 :    blanked off pipe; blanked-off pipe
• "双闭管" 英文翻译 :    doubly chained tree; doubly closed tube
• "闭管分析" 英文翻译 :    closed tube analysis; closedtubeanalysis
• "闭管扩散" 英文翻译 :    closed ampoult difiusion; closed tube diffusion; closed-capsule diffusion
• "闭管试验" 英文翻译 :    closedtube test
• "闭管压力计" 英文翻译 :    closed manometer
• "闭管氧化" 英文翻译 :    closed tube oxidation diffusion system
• "关闭管路" 英文翻译 :    blinding off a line
• "密闭管道" 英文翻译 :    closed conduit
• "塑料封闭管" 英文翻译 :    plastic encapsulation
• "闭管循环系统" 英文翻译 :    closed vascular system
• "闭管真空扩散" 英文翻译 :    closed ampoule vacuum diffusion
• "分段关闭管路" 英文翻译 :    cushioning pipe
• "封闭管道系统" 英文翻译 :    closed pipe system
• "密闭管线输送" 英文翻译 :    tight-line pumping
• "闭管海水温度表" 英文翻译 :    protected reversing thermometer
• "闭管氧化 扩散系统" 英文翻译 :    closed tube oxidation diffusion system
• "封闭管式熔断器" 英文翻译 :    enclosed tubular cut-out
• "全封闭管子通风式" 英文翻译 :    totally-enclosed pipe-ventilated
• "封闭管道中流量的测量" 英文翻译 :    flow in closed conduits
• "起落架舱门关闭管路" 英文翻译 :    gear door up line

• Closed ampoule vacuum diffusion
  闭管真空扩散
• Laser induced diffusion is performed within a non - homogenous 4 - d temperature field , which is different with the normal closed - ampoule diffusion in a homogenous and steady temperature field
  与常规闭管扩散的均匀恒定温度场不同,激光诱导扩散是在四维( x , y , z , t )非均匀温度场中进行。
• With the development of doping technology , the formation of the base region in high - voltage transistor can be made by b diffusion technology , b - a1 paste - layer diffusion technology , close - tube ga - diffusion technology and open - tube gallium - diffusion technology
  随着掺杂工艺的不断发展，高反压晶体管基区的形成经历了扩硼工艺、硼铝涂层扩散工艺、闭管扩镓工艺到开管扩镓工艺的发展。
• At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
  在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。

• 闭管的日语：みっぺいかん へいかん