费米能级的英文

• fermi characteristic energy level
• fermi energy
• fermi level
• fermi limit

• "费"英文翻译    fee; expense; expenditure; d ...
• "米"英文翻译    rice
• "能级"英文翻译    energy level
• "准费米能级" 英文翻译 :    quasi fermi － level; quasi fermi－level; quasi fermilevell
• "费米能级的钉扎" 英文翻译 :    pinning of fermi level
• "费米能级的钉扎（效应）" 英文翻译 :    pinning of fermi level
• "空穴准费米能级" 英文翻译 :    hole quasi fermi level
• "费米能" 英文翻译 :    fermi energy
• "费米能阶" 英文翻译 :    fermi energy
• "费米能量" 英文翻译 :    fermi energy
• "准费米能阶" 英文翻译 :    quasi fermi levels
• "本质费米能阶" 英文翻译 :    intrinsic fermi level
• "费米特性能级" 英文翻译 :    fermi characteristic energy level; fermi characteristic level
• "费米" 英文翻译 :    composite particle model of fermi and yang; enrico fermi; femi; fermi dirac gas; fermi dirac statistics; fermi distribution function; fermi-dirac distribution; fermi-walker tra ortation; fermi-walker transportation; fermion; fm; imref
• "能级" 英文翻译 :    [物理学] energy level 费密能级 fermi level; 基态能级 ground state level
• "费尔米能阶" 英文翻译 :    fermi energy level
• "萨尔米能" 英文翻译 :    e. tammi-salminen
• "厄费米" 英文翻译 :    euphemie
• "费米（单位）" 英文翻译 :    fermi
• "费米尔" 英文翻译 :    fermil
• "费米海" 英文翻译 :    fermi sea
• "费米奖" 英文翻译 :    enrico fermi award
• "费米孔" 英文翻译 :    fermi hole
• "费米面" 英文翻译 :    fermi surface
• "费米纳" 英文翻译 :    femina

• Corresponding relationship between electrode potential and fermi level
  金属电极电位与费米能级的对应关系
• Pinning of fermi level
  费米能级的钉扎效应
• Quasi fermi level
  准费米能级
• Measurement of cavity loss and quasi - fermi - level separation for fabry - p 233 ; rot semiconductor lasers
  腔半导体激光器的腔内损耗和准费米能级差的测量
• It ' s around the fermi energy grade that the state densities were the greatest in y - mno2 , limn2o4 and li2mn2o4 , indicating that three kinds of materials were suitable to intercalation and deintercalation of lithium ion
  在( - mno2 、 limn2o4和li2mn2o4三种材料中，都是费米能级周围的态密度最大，表明三种电极材料容易得到或失去电子。
• The ab initio calcu1ation by selecting cluster mode1 with different size showed that with the decrement of model size the quantum - sized effect was more prominence , the energy distance was bigger near fermi energy , the energy schism was also more obvious
  选取不同尺度的簇模型从头计算表明，随着尺度的减小量子尺寸效应越发显著，费米能级附近的能级间隔变大，能级分立现象更加明显。
• As a result , the fermi level at the surface will shift towards the valence band maximum ( vbm ) . accordingly the band bending increases , and the surface depletion layer thickness enhances , therefore , the channel thickness reduces . this is the main factor resulting in the decrease of saturated drain - source current
  表面费米能级向价带顶移动，能带弯曲加剧，肖特基势垒高度增加，表面耗尽层变厚，导电沟道变窄，是导致源漏饱和电流下降的主要因素。
• Topics covered include : crystal lattices , electronic energy band structures , phonon dispersion relatons , effective mass theorem , semiclassical equations of motion , and impurity states in semiconductors , band structure and transport properties of selected semiconductors , and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling
  被覆盖的论题包括：晶格、电子能带结构、声子色散关系、有效质量理论、半经典运动方程和半导体中的非纯态、选择性半导体的带结构和输运性质固体量子理论与准费米能级以及用于器件建模的玻尔兹曼输运理论之间的联系。
• Because quasi - fermi levels of a laser diode ( ld ) vary with the carrier density , it is predicted that a new type of hysteresis loop should occur for the current passing ld while a hysteresis loop appears on the power - frequency curve of the ecld . an explicit analytical expression for the frequency width of the hysteresis loop and the condition for the formation of the hysreresis loop has been deduced
  预测了由于半导体激光二极管( ld )的准费米能级之差随ld内线流子密度的变化而变化，因而，在调谐外腔半导体激光器的输出功率?振荡频率曲线上出现双稳环的时候，通过ld的电流也应出现一个伴随的新型双稳环? ?电流双稳环。
• The main work can be summed up as follows : firstly , we studied the thermal - field properties of vcsels , and analyzed the influences of current spreading , material parameters and operating conditions on the temperature distributions . secondly , we began with the electrode voltage and calculated the equipotential s distributions , compared the distributions of voltages and current densities in different depths of vcsels , and then studied the influences of the oxide - confining region with different position or thickness , and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density , carrier concentration and temperature in the active region . thirdly , we realized the coupling of electricity , optical and thermal - fields , worked out the threshold voltage , calculated the distributions of the injected current density , carrier concentration and temperature under different offset voltages , and analyzed the impacts of temperature profile and carrier density on the refractive index , fermi levels and optical - field
  具体工作可以概括如下：首先，研究了vcsel的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑n - dbr和双氧化限制层时激光器中的等势线分布，分析了n - dbr和双氧化限制层对vcsel电流密度、载流子浓度、温度和光场分布的影响。

• 费米能级的日语：フェルミじゅんい フェルミ準位