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表面生长的英文

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"表面生长"怎么读用"表面生长"造句

英文翻译手机手机版

  • scum
  • superficial growth

例句与用法

  • Epiphyte any plant growing upon or attached to another plant or object merely for physical support
    附生植物:仅依附于其它植物体体表或物体表面生长的植物。
  • The frosting of air cooler is owed to the joint effects of surface growth of frost and deposition of floating ice crystal ; 2
    结霜是表面生长与悬浮冰晶沉积等共同作用的结果。
  • Layered structure has been found ( or could be deduced ) upon the tem observations from both cross section view and plane view specimens
    本论文的第一部分,是分别制备平面和截面电镜样品,并利用电子显微镜研究钛合金表面生长的羟基磷灰石的结构。
  • The charter i introduced the schematics of the experimental setup , the model of pulsed laser ablating solid target ( s - n model ) and the subplantation model for film growing proposed by y . lifshitz
    第一章简要介绍了实验装置、激光烧蚀固体靶的s - n模型和y . lifshitz提出的次表面生长模式。
  • " this may be due to the fact that the melanoma arose on a hair - bearing surface or arose in association with a nevus with hair without causing destruction of the hair follicles , " the investigators say
    研究者认为,这可能由于黑素瘤刺激皮肤表面生长毛发或者可能是激活了相关的神经,并且没有破坏该处的毛囊。
  • Epinasty ( epinastic movements ) a nastic movement that involves the curving of a plant organ away from the axis ( i . e . downward ) as a result of greater growth on the upper surface , as in the opening of flowers
    偏上性生长(偏上性运动) :植物开花时由于上表面生长较快而引起植物器官弯曲并偏离轴向的向性运动(如向下) 。
  • Infrared reflectance was used in measuring the characteristics of the sio2 layer on sic . a peak appeared at about 1100cm - 1can be used to monitor the density of the sio2 layer . after annealing in n2 , the peak shifted towards high frequency
    运用红外反射光谱研究sic表面生长的氧化层在退火过程中特征反射峰的四川大学硕士学位论文漂移情况,实验发现经过nz退火后,表面5102的1100cm - ,附近的特征反射峰位向高频方向移动,并且在1100左右退火时,这种漂移最明显。
  • By means of sem , tem , laser scattered particle analyzer , etc . , the formation mechanism of ultrafine sio2 particle was studied . it was found that at the initial stage , the sio2 particle consisted of some minicrystal , but after the initial stage the sio2 particle was formed by some soluble aggregated substance growing on the surface of the early particle
    运用扫描电镜、透射电镜、激光粒度分析仪等检测手段,探讨了体系中超细二氧化硅颗粒的形成机理和过程,指出超细二氧化硅粒子前期是由体系中的微晶核组成,中后期则由体系中的可溶性缩合物在其表面生长而成。
  • 3 . metal supported on ti02 ( 110 ) : calculation and simulation chapter 4 , the properties of k , cu supported on the tio2 ( 110 ) surface have been studied by means of density functional theory , bare clusters models and embedded cluster model to using to obtain dft data and construct interatomic potential
    3 .纳米二氧化钦负载金属体系的计算模拟研究我们对纳米金红石型tio :吸附k 、 cu金属原子进行了dft研究,并模拟了金属在纳米金红石型tio :表面的吸附行为,解释了纳米金属簇在金红石型tio :表面吸附的行为,预测了纳米金属团簇在表面生长的机理。
  • The key stage of fabricating gene chip is pretreatment of glass surface including the processes of nh3h2o treatment , aminosilane treatment and aldehyde treatment . the pretreatment can grow active group that can bind probe effectively on the surface of glass slide . as a result , the actively treated glass slide can suit for fabricating in - situ synthesis high density gene chips
    基因芯片制备技术的关键步骤是玻片表面预处理,即对玻片表面进行羟基化、氨基化和醛基化处理,使表面生长的活性基团能有效固定寡核苷酸探针,以满足原位合成高密度基因芯片对玻片的要求。
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