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薄膜电容的英文

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"薄膜电容"怎么读用"薄膜电容"造句

英文翻译手机手机版

  • thin film capacitor

例句与用法

  • V2a pc poly carbonated film capacitor
    V2a pc聚碳酸酯薄膜电容polycabonate
  • Ceramic caps with any other dielectric other than npo should only be used for bypass applications
    任何不是npo的其它介质的薄膜电容,应只能被用于旁路。
  • For many applications thin - film resistors and capacitors offer certain distinct advantages over their junction counterparts
    在许多场合,薄膜电阻、薄膜电容与结电阻、结电容相比有一些明显的优点。
  • Platinum is more suitable in forming the bottom electrode of bst capacitor than gold , but the top electrode and transmission lines prefer to gold
    铂比金更适合作为移相器中bst薄膜电容的下电极,而上电极和传输线导体材料则选用金。
  • In 1998 , epcos added a 45 million usd investment in zhuhai to establish their ceramic components and film capacitor production plant in zhuhai ' s free trade zone
    1998年,爱普科斯增资4500万美元,在珠海保税区投资建设了生产陶瓷类元件及薄膜电容的保税区工厂。
  • After the analysis of some structures commonly used in dielectric phase shifter , a new structure named distributed capacitor - loaded phase shifter was carried out . it is comprised of a high - impedance transmission line periodically loaded with bst ( baxsr1 - xtio3 ) thin film capacitors
    在对现有的几种薄膜介质移相器结构进行分析的基础上,提出了一种新型的分布式电容负载型薄膜介质移相器结构,它由高阻传输线和周期性负载的钛酸锶钡薄膜电容构成。
  • It is capable to lower the insertion loss by using high conductivity electrode material and increasing the electrode thickness and quality factor of bst capacitor . at the same time increasing the tunability of the dielectric constant and the length of the transmission line can increase the phase shift
    通过使用高电导率的电极材料、增加电极的厚度、提高bst薄膜电容的q值可以实现器件插损的降低;增大薄膜的介电系数变化率和传输线长度可以增加移相度。
  • Among various fabrication techniques of thin film , the sol - gel process has gained much interest for the preparation of pzt thin film , due to ihe advantages of good homogeneity , easy control of composition , low in - ill i reaving temperature , easy formation of large area thin films pb ( zrxti : - k ) 0 : , ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ) . lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
    Pzt的制备方法有很多,其中溶胶?凝胶( sol - gel )方法可以和集成电路( ic )光刻工艺相互兼容,处理温度低,有大面积涂敷性能,能精确地控制组分,无需复杂的真空设备,成本低廉,所以对于集成铁电薄膜电容的应用这种方法有很广阔的前景。本文利用sol - gel技术在掺锡的in _ 2o _ 3透明导电薄膜( ito )衬底和低阻硅衬底上成功地制备了pzt铁电薄膜。运用了x射线衍射, sawyer - tower电路和lcr电桥分别对薄膜的晶化温度,结构和电学性能进行了测试。
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