肖特基势垒二极管的英文

• sbd
• schottky diode

• "肖"英文翻译    resemble; be like
• "特"英文翻译    particular; special; excepti ...
• "基"英文翻译    base; foundation
• "势垒"英文翻译    barrier potential; potential ...
• "二极管"英文翻译    diode; two-electrode valve
• "肖特基势垒二极管整流器" 英文翻译 :    schottky-barrier diode rectifier
• "肖特基势垒光电二极管" 英文翻译 :    schottky barrier photodiode
• "肖特基势垒" 英文翻译 :    schottky barrier
• "肖特基势垒雪崩光电二极管" 英文翻译 :    schottky-barrier avalanche photodiode
• "势垒二极管" 英文翻译 :    barrier diode
• "肖特基势垒栅" 英文翻译 :    schottky barrier gate; schottky electrode
• "萧特基势垒双整流二极管" 英文翻译 :    schottky barrier double rectifier diode
• "表面势垒二极管" 英文翻译 :    surface barrier diode
• "莫特势垒二极管" 英文翻译 :    mott barrier diode
• "莫脱势垒二极管" 英文翻译 :    mott-barrier diode
• "肖特基二极管" 英文翻译 :    hcd hot-carrier diode; schottky diode
• "变截面肖特基势垒栅" 英文翻译 :    variable section schottky barrier gate
• "肖特基钳位二极管" 英文翻译 :    schottky clamp diode
• "肖特基势垒栅场效应晶体管" 英文翻译 :    sb fet; schottky barrier gate fet; schottky diode fet; schottky gate fet; sdfet; sfet
• "肖特基势垒栅金属氧化物半导体" 英文翻译 :    sbmos; schottky barrier mos
• "增强型肖特基势垒场效应晶体管" 英文翻译 :    enhancement type schottky barrier fet; esbt
• "增强型肖特基势垒集成电路" 英文翻译 :    enhancement schottky barrier integrated circuit
• "低功耗肖特基二极管" 英文翻译 :    lpsd low power schottky diode
• "硅大电流肖特基开关二极管" 英文翻译 :    silicon high-current schottky barrier switching diode
• "萧特基势垒双整流器" 英文翻译 :    schottky barrier double rectifier

• Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact
  肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
• It was concluded that sequence of depositing process was the key factor that determined the results of the experiments . 3
  3 .制成了al / c _ ( 60 ) / cu结构的肖特基势垒二极管并对其电学特性做了研究。
• Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work . in addition , we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic
  本文讨论了n型6h - sic欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属au及ni在n型6h - sic硅面( 0001晶向)上制备了具有一定特性的肖特基势垒二极管。