缺陷密度的英文

• defect concentration
• defect density
• defects concentration
• density of defects

• "缺陷"英文翻译    defect; flaw
• "密度"英文翻译    density; thickness
• "内部缺陷密度" 英文翻译 :    internal flaw concentration
• "缺陷密度分布" 英文翻译 :    defect density distribution
• "塌陷密度" 英文翻译 :    density of collapse
• "缺陷" 英文翻译 :    defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
• "低密度脂蛋白异化作用缺陷" 英文翻译 :    low density lipoprotein catabolic defect
• "密度" 英文翻译 :    1.(密集的程度) density; thickness 火力密度 density of fire; 兵力密度 density of troops; 那个国家的人口密度为每平方英里685人。 the population density of that country is 685 per square mile.2.[物理学] (物体的质量和其体积的比值) density 电流密度 current density; 海水密度 seawater density; 水银的密度比水大得多。 mercury has a much greater density than water.; 密度计 densimeter; densitometer; density gage; density indicator; gravitometer
• "c1缺陷" 英文翻译 :    c1 deficiency
• "c2缺陷" 英文翻译 :    c2 deficiency
• "c3缺陷" 英文翻译 :    c3 deficiency
• "c4缺陷" 英文翻译 :    c4 deficiency
• "c5缺陷" 英文翻译 :    c5 deficiency
• "c6缺陷" 英文翻译 :    c6 deficiency
• "c8缺陷" 英文翻译 :    c8 deficiency
• "点缺陷" 英文翻译 :    point defect; point imperfection; pointdefect; pointimperfection; spot defect
• "钢缺陷" 英文翻译 :    steel defect
• "光缺陷" 英文翻译 :    optical defect
• "假缺陷" 英文翻译 :    artifact
• "链缺陷" 英文翻译 :    chain defect
• "零缺陷" 英文翻译 :    zd zero defects; zero defect
• "酶缺陷" 英文翻译 :    enzyme defect
• "面缺陷" 英文翻译 :    area defect; interface defect; planar defect; plane defect; plane fault
• "轻缺陷" 英文翻译 :    min defect
• "氢缺陷" 英文翻译 :    hydrogen defect

• The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics
  利用m - lec法可以消除单晶中的位错，降低缺陷密度，降低单晶中的杂质含量，并能使杂质在晶体中的分布均匀，得到晶体均匀性、纯净度都高的gaas单晶。
• To hydrogenated amorphous silicon ( a - si : h ) , however , it has much less defects than non - hydrogenated a - si , for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond . with these virtue , a - si : h accord with device quality . the films of a - si : h have widely used in solar cell , film transistor and flat display
  对于氢化非晶硅( a - si : h ) ，由于氢通过无连接端的硅原子键合来消除缺陷，使得氢化非晶硅的缺陷密度比未氢化的非晶硅大大降低了，从而使氢化非晶硅符合器件级质量材料的要求。
• We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
  研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。
• By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
  实验结果表明：随着工作气压的减小，薄膜的晶粒尺寸有所减小；通过提高氢气稀释度，利用原子氢在成膜过程中起的刻蚀作用，可以稳定结晶相并去除杂相；选择适当的热丝距离能保证反应气体充分分解，又使衬底具有较高的过冷度，是形成纳米薄膜的重要条件；采用分步碳化法可以提高形核密度，有利于获得高质量的纳米- sic薄膜；衬底施加负偏压可以明显提高衬底表面的基团的活性，因负偏压产生的离子轰击还能造成高的表面缺陷密度，形成更多的形核位置。
• As recent research and productive practice showed , such conventional parameters as dislocation densiry ( epd ) , charge carrier concentration , mobility were not enough to evaluate the si - gaas material ' s quality , let alone revealing the relationship between the quality of material and the performance of devices . on the other hand , recent research showed that ab microdefects had direct relationship with device performance , whose density ( ab - epd ) was more important than epd for revealing the relationship between the quality of material and the performance of devices
  近些年来的科研和生产实践均表明，现行的常规参数，如位错密度、载流子浓度、迁移率等对表征半绝缘砷化镓材料的质量是不充分的，特别是不能反映材料质量与器件性能之间的关系。近期的科研成果证明， ab微缺陷与器件性能有直接的关系，而且ab微缺陷密度( ab - epd )是比位错密度更加敏感、更加重要的参数。
• In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper
  本文将cz硅单晶片在secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷( flowpatterndefects , fpds )在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对fpds缺陷端部结构的影响；本文还通过研究ar气氛下快速退火( rapidthermalannealing , rta )对fpds缺陷密度的影响，初步探讨了fpds的消除机理。
• With plating time going on , the nano - polycrystal gathering grows in two dimensions , and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface . because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel , the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated , and then their size is smaller . the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content , the microstructure of coating turns from nano - crystalline to the amorphous
  随着施镀时间的延长，纳米晶聚晶体在横向二维生长的同时，在纳米晶聚晶体的表面上也进行着三维方向的新的一层聚晶体的生长；在调质态45钢表面，由于其具有比较高的晶界和缺陷密度，因此在沉积初期，纳米晶聚晶体的成核密度也较大，从而在二维方向聚晶体的尺度较小，镀层沉积初期表现为致密细小的鳞片状组织。