结特性的英文

• p-n junction characteristicpn

• "结"英文翻译    p-n junction
• "特性"英文翻译    characteristic; character; p ...
• "粘结特性" 英文翻译 :    adhesive failure; bonding characteristics; caking character
• "唯一终结特性" 英文翻译 :    unique termination property
• "有限终结特性" 英文翻译 :    finite termination property
• "美结特" 英文翻译 :    meget
• "特性" 英文翻译 :    characteristic(s); character; performance; features; properties; behaviour; response; characteristic property; peculiarity; speciality; specificity; specific property
• "特性，独特性；怪癖" 英文翻译 :    peculiarity
• "安特性" 英文翻译 :    i characteristic
• "按特性" 英文翻译 :    by properties
• "泵特性" 英文翻译 :    pumcharacteristics
• "比特性" 英文翻译 :    ratio characteristic
• "表特性" 英文翻译 :    table property
• "波特性" 英文翻译 :    wave property
• "窗特性" 英文翻译 :    window property
• "磁特性" 英文翻译 :    magnetic characteristic; magnetic charateristic; magnetic properties; magneticcharacteristic
• "灯特性" 英文翻译 :    modulation characteristic
• "电特性" 英文翻译 :    electrical characteristics
• "蝶特性" 英文翻译 :    regulating characteristic
• "动特性" 英文翻译 :    ballistics characteristic; dynamic characteristics; dynamic response
• "独特性" 英文翻译 :    distinctness; individualism; individuality; originality; peculiarity; risk; specificity; uniqueness
• "段特性" 英文翻译 :    segment characteristic
• "舵特性" 英文翻译 :    rudder performance
• "阀特性" 英文翻译 :    valve characteristic
• "负特性" 英文翻译 :    negative characteristic

• Coordination chemistry : characterization of the electronic structure and the bonding characteristic of nonplanar metalloporphyrins in different oxidation and spin states
  配位化学：探讨非平面金属在各种不同氧化态和自旋态之电子结构和键结特性。
• In this paper we studied the influence of process parameters of depositing cbn films , the n - rype doping of bn films and the properties of p - si / n - bn heterojunctions and gained the results as follows
  本文主要研究工艺参数对制备立方氮化硼的影响，氮化硼的n型掺杂和p - si n - bn异质结特性等内容，得到了如下主要结果。
• In this thesis , the basic characteristics of algan / gan heterojuntion have been analyzed . then fabrication of algan / gan hemt and current collapse are investigated . ti / al / ni / au ohmic contact to low doping gan film is studied
  本文以所制得hemt样品为研究对象,在分析其异质结特性的基础上,对电流崩塌效应机理作了探索性研究。
• On the base of the study on sige material physics characteristic , sige / si hetero - junction characteristic , we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region , and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface
  本文针对sige材料的物理特性、 sige si异质结特性建立了准确的物理参数模型。在详细论述了sige si异质结功率二极管良好特性的基础上，提出了两种快速软恢复sige si功率二极管新结构： n ~ -区采用多层渐变掺杂和阴极侧采用理想欧姆接触。