等离子体刻蚀的英文
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"等离子体刻蚀"怎么读用"等离子体刻蚀"造句
英文翻译手机版
- plasma etch
- "等离子体"英文翻译 plasma; plasma body
- "刻蚀"英文翻译 sculpture; corrosion; mechan ...
- "等离子体刻蚀工艺" 英文翻译 : drie
- "等离子体刻蚀机" 英文翻译 : icp
- "靶等离子体" 英文翻译 : target plasma
- "钡等离子体" 英文翻译 : barium plasma
- "超等离子体" 英文翻译 : epiplasma
- "磁等离子体" 英文翻译 : magnetic plasma; magnetoplasma
- "等离子体" 英文翻译 : plasma; plasma body (一般指电离的气体, 由离子、电子及未经电离的中性粒子所组成, 如火焰和电弧中的高温部分, 太阳和其它恒星的表面气层等)
- "等离子体波" 英文翻译 : plasma waves
- "等离子体层" 英文翻译 : plasmasphere
- "等离子体刀" 英文翻译 : plasma scalpel
- "等离子体管" 英文翻译 : plasma tube; plasmatron
- "等离子体弧" 英文翻译 : plasma arc
- "等离子体环" 英文翻译 : plasma torus
- "等离子体怜" 英文翻译 : plasma flow
- "等离子体流" 英文翻译 : plasma flow; plasma jet; plasma stream
- "等离子体炉" 英文翻译 : plasma furnace; plasmafurnace
- "等离子体片" 英文翻译 : plasma sheet; plasmasheet
- "等离子体器" 英文翻译 : plasmatron
- "等离子体枪" 英文翻译 : plasma gun; plasma jet
- "等离子体区" 英文翻译 : plasma slab
- "等离子体势" 英文翻译 : plasma potential
- "等离子体态" 英文翻译 : plasma state
- "等离子体团" 英文翻译 : plasmoid
例句与用法
- Influence of process parameters on the etching rate in inductively coupled plasma etcher
等离子体刻蚀中工艺参数对刻蚀速率影响的研究 - Hardware and software design for the inductively coupled plasma etching machine " s system are also presented
介绍了plc控制等离子体刻蚀机的硬件系统和软件系统的设计。 - Effect of microwave plasma etching decarburization onadhesive strength and cutting performance of cvd diamond coated tools
微波等离子体刻蚀处理对金刚石薄膜涂层刀具附着力和切削性能的影响 - Via the experiment , the best etching process of etching insb - in material with chclfi plasma is confirmed . and the mechanism is also analyzed and discussed
通过实验确定该条件下chclf _ 2等离子体刻蚀insb - in的最佳工艺,并分析探讨chclf _ 2等离子体刻蚀insb - in薄膜的机理。 - Finally , according to the technique of plasma etching , an evolution model describing the spatio - temporal profiles of the micro - trench is established . and that we simulated the effects of collisions and the source parameters on the etching profiles
最后,针对等离子体刻蚀工艺,建立了微结构区剖面的时空演化模型,并模拟了碰撞效应和电源参数对刻蚀剖面演化的影响。 - When the two layers of sio2 with different refractive index are finished , the designed mask pattern is printed on the film by photolithography . after that , icp is performed for dry etching , then , the waveguide structures are obtained . at present , the rudimental graph of edg has been obtained
两层不同折射率的sio _ 2薄膜制备好之后,经过光刻、等离子体刻蚀( icp )的工艺步骤之后,形成了波导结构,初步制作出了器件的图形。 - In a word , the two type of voa both have valuable applicability and potential market . the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing . other new processing , polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied
作者经过反复的工艺实验,确定了聚合物波导涂膜和固化、三层金属电极蒸发和腐蚀等新工艺的参数,并得到了聚合物紫外固化、等离子体刻蚀等新工艺的初步数据。
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