突变异质结的英文

• abrupt heterojunction

• "突变"英文翻译    sudden change; change sudden ...
• "异质"英文翻译    neterogeny; alloplasm; heter ...
• "结"英文翻译    p-n junction
• "异质结" 英文翻译 :    heterojunction
• "双异质结" 英文翻译 :    double heterojunction
• "双异质结构" 英文翻译 :    double heterostructure; double-heterostructure
• "掩埋异质结" 英文翻译 :    bury heterogeneous
• "异质结靶" 英文翻译 :    heterojunction target
• "异质结材料" 英文翻译 :    heterojunction materials
• "异质结构" 英文翻译 :    heterojunction structure; heterostructure
• "异质结结构" 英文翻译 :    heterogeneous structure; heterojunction structure
• "异质结面" 英文翻译 :    heterojunction interface
• "异质结栅" 英文翻译 :    heterojunction gate
• "异质结注入" 英文翻译 :    heterojunction injection
• "变异，突变" 英文翻译 :    mutation
• "带形异质结构" 英文翻译 :    strip geometry heterostructure
• "弹道异质结构" 英文翻译 :    ballistic heterostructure
• "多异质结结构" 英文翻译 :    multiheterostructure
• "异质结二极管" 英文翻译 :    heterodiode; heterojunction diode
• "异质结光电池" 英文翻译 :    heterojunction photovoltaic cell
• "异质结合细胞" 英文翻译 :    heterozygous cell
• "异质结激光器" 英文翻译 :    heterojunction semiconductor laser; heterolaser
• "异质结晶体管" 英文翻译 :    heterojunction transistor
• "突变异种" 英文翻译 :    mutant
• "半导体异质结构" 英文翻译 :    heterojunction; semiconductor heterostructure

• From the result of the practice , this structure enhances the brightness of led effectively , improves the quality of the crystal and improves the performance of the device
  并且从实验结果看，双层突变异质结有效提高发光亮度，改善了器件参数，晶体质量变好。
• As there is some difficulty to manufacture the graded heterojunction , we put forward that it can use double layer abrupt heteojunction to take the place of the graded heterojunction
  由于渐变异质结在实现上存在一定的困难，因此我们提出了用双层突变异质结拟合渐变异质结。
• The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
  在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。
• Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory , and the conclusion is that it will enhance the current injection ratio , decrease the built - in voltage , improve the quality of the crystal and it will not affect the confinement to the hole
  在理论上提出在hb - led器件的dh结构中使用p - n结的渐变异质结替代现行的p - n突变异质结。分析采用异质结渐变方式将增加hb - led的电流注入比，减小内建电势，改善晶体质量，并且不影响p - n结对空穴的限制。

• 突变异质结的日语：アブラプトいしゅせつごう アブラプト異種接合