禁带宽度的英文

• energy gap

• "禁"英文翻译    prohibit; forbid; ban
• "带宽"英文翻译    tape width; strip width; tap ...
• "度"英文翻译    surmise; estimate
• "半频带宽度" 英文翻译 :    half bandwidth
• "半谱带宽度" 英文翻译 :    half-band width
• "补给带宽度" 英文翻译 :    range of recharge zone
• "磁带宽度" 英文翻译 :    tape width
• "低频带宽度" 英文翻译 :    lower bandwidth
• "地带宽度" 英文翻译 :    swath width
• "调制带宽度" 英文翻译 :    modulation bandwidth
• "光带宽度法" 英文翻译 :    light band width pattern
• "光谱带宽度" 英文翻译 :    spectral band width
• "基带宽度" 英文翻译 :    baseband width
• "临界带宽度" 英文翻译 :    critical band width
• "履带宽度" 英文翻译 :    track widths
• "能带宽度" 英文翻译 :    energy band width
• "频带宽度" 英文翻译 :    b bandwidth; broadness of band; bw bandwidth; frequency band width; frequency bandwidth; frequency bandwidtn; frequency span
• "频带宽度，带度" 英文翻译 :    bw band width
• "频带宽度计" 英文翻译 :    bandwidth meter
• "频率带宽度" 英文翻译 :    bandwidth
• "谱带宽度" 英文翻译 :    effective bandwidth; spectral band width; spectral bandwidth
• "曲折带宽度" 英文翻译 :    meander width
• "射频带宽度" 英文翻译 :    radio-frequency bandwidth
• "搜索带宽度" 英文翻译 :    sweep width
• "探雷带宽度" 英文翻译 :    mine detection width

• Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively .
  例如，硅和锗的禁带宽度分别为11电子伏和065电子伏。
• The band gap calculation of wide - gap ternary compound nitride semiconductors in group
  族宽禁带含氮三元混晶半导体禁带宽度的计算
• Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness
  光学厚度对一维光子晶体禁带宽度的调制
• Silicon and germanium , for instance , have forbidden bands whose widths are 1 . 1 and 0 . 65ev , respectively
  例如，硅和锗的禁带宽度分别为1 1电子伏和0 65电子伏。
• Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev
  Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。
• Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
  本体硅为间接禁带半导体，且禁带宽度比较窄( 1 . 12ev ) ，在室温下很难发可见光。
• But the seebeck coefficient was reduced by pd - substituted because of the interdict band width was reduced
  Pd的取代也同时使zrnisn基化合物的禁带宽度减小，降低了体系的seebeck系数。
• In order to implement photo - catalysis in common condition , the band gap must be decrease . doping is a good measure
  为了实现自然条件下的光催化，需要降低tio _ 2禁带宽度，掺杂则是一种较好的措施。
• In this paper the band - gaps of the different concentration ge - doped czsi were measured , and the band - gap numbers were gotten
  论文中对硅锗单晶的光学禁带宽度进行了测试，得出了掺锗不同浓度下禁带宽度值。
• The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
  本体硅为间接禁带半导体，且禁带宽度较窄，室温下很难发光。

• 禁带宽度的日语：エネルギーギャツプ エネルギーかんげき エネルギー間げき きんしたいのはば