直拉法的英文

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"直拉法"怎么读用"直拉法"造句

英文翻译手机版

vertical pulling method

"直"英文翻译 straight; stiff
"拉"英文翻译 cut; slash; slit
"法"英文翻译 law
"液封直拉法" 英文翻译 : lec; liquid encapsulation czochralski process
"高压液封直拉法" 英文翻译 : high-pressure liquid encapsulation pulling method
"施加磁场液封直拉法" 英文翻译 : magnetic field applied lec
"直拉" 英文翻译 : straight pull
"液封直拉法砷化镓单晶及切割片" 英文翻译 : liquid encapsulated czochralskigrown gallium arsenide single crystals and ascut sliceses
"拉法" 英文翻译 : daraf; dragging method; lafayette county; rafa; raffa; rapha
"直拉窗" 英文翻译 : sash window
"直拉杆" 英文翻译 : drag link
"直拉式" 英文翻译 : straight pull
"直拉条" 英文翻译 : straight brace
"巴眼直拉" 英文翻译 : bagan terap
"垂直拉管机" 英文翻译 : up-drawing tube machine
"垂直拉晶机" 英文翻译 : vertical crystal puller
"垂直拉伸" 英文翻译 : stretched vertically; strict type semantic
"法直拉晶体" 英文翻译 : cz
"竖直拉晶器" 英文翻译 : vertical crystal puller
"直拉单晶" 英文翻译 : pulling of crystals
"直拉杆总成" 英文翻译 : drag link assy
"直拉式枪机" 英文翻译 : turn bolt
"直拉条架" 英文翻译 : straight-braced frame
"转向直拉杆" 英文翻译 : steering drag link
"垂直拉紧装置" 英文翻译 : vertical take-up

例句与用法

Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化镓单晶及切割片
Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits , and it has become one of major materials in information industry
液封直拉法生产的半绝缘砷化镓单晶( lecsi - gaas )被广泛用于微波器件和高频集成电路的衬底材料，成为当代信息产业的重要材料之一。
In this paper , the author demonstrated the basic principle , development history and characters of high - press liquid - enveloped czochralski method ( leg ) , and its application in producing the gap semi - conductors , at the same time of introducing the general situation of them
本文论述了高压液封直拉法的基本原理、发展历史、特点，该法在半导体材料行业的应用及应用中的影响因素，化合物半导体材料磷化镓的概况、高压液封直拉法在制备该材料时的应用。
By means of chemical etching , microscope observation , eelectron probe x - ray micro - analyzer ( epma ) , the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated , the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通过ab腐蚀、 koh腐蚀，金相显微镜观察，透射电镜能谱分析，电子探针x射线微区分析，研究了液封直拉法生长的非掺半绝缘砷化镓( lec ， si - gaas )单晶中碳的微区分布。