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电子回旋共振的英文

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"电子回旋共振"怎么读用"电子回旋共振"造句

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  • electron cyclotron resonance

例句与用法

  • To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
    为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。
  • Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
    摘要采用微波电子回旋共振等离子体反应离子刻蚀( ecr - rie )装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
  • But the deposition rate and quality of a - si : h was primarily affected by preparation methods . recently , the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied
    为了获得高速沉积下的高品质a - si : h薄膜，使其能够产业化，微波电子回旋共振化学气相沉积( mwecrcvd )方法在国际上受到了人们广泛的重视。
  • In view of its virtue of high degree of electron and ion generations , the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate
    鉴于微波电子回旋共振化学气相沉积( mwecrcvd )系统具有电子和离子产生率高等优点，人们期望它能在较高的沉积速率下获得器件级质量的a - si ： h薄膜。
  • The gas sources that we used are trimethylgallium ( tmg ) and 99 . 9999 % purity nitrogen , which were fed into reaction chamber and resonance cavity respectively . the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field . consequently , gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
    实验采用有机金属三甲基镓气源( tmg )和99 . 9999纯度的氮气，在ecr - pecvd150装置共振腔内电子回旋共振吸收微波能量产生的高密度ecr等离子体在磁场梯度和等离子体密度梯度的作用下向下级反应室扩散，在放置于下游区样品台上的- al _ 2o _ 3衬底表面附近发生物理化学反应沉积成gan薄膜。
  • Furthermore , the growth and the study of self - organized quantum dots structures become more and more important recently , and the application of self - organization technique become wider and wider in this thesis , we address the theory of film growth and the growth technique firstly more , the ways and characteristics of surface detection are prescribed we mainly report the growth process , results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd , in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures , including the substrate cleaning , nitridation , the growth of buffer and the growth of gan and ain epilayer , is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover , we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature , we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
    本论文主要论述了在espd - u装置上，采用电子回旋共振等离子体增强mocvd ( ecr - pamocvd )方法，在蓝宝石衬底上通过s - k模式自组装生长gan aln量子点结构的生长工艺、结果及讨论。而重点分析了自组装生长量子点之前的aln外延层生长工艺，包括衬底清洗、氮化、缓冲层的生长和gan 、 aln外延层的生长；通过高能电子衍射、 x射线衍射和原子力显微镜测试，并且对这些测试结果进行了详细的比较研究，得出了较优化的工艺条件，生长出了晶质较好、表面较平整的aln外延层；进而采用s - k模式自组装生长了gan aln量子点结构。由于实验装置加热炉温度的限制，我们没有能够生长出原子级平滑的aln外延层表面，因而没能够生长出密度比较大和直径比较小的量子点。
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