电压漂移的英文

• voltage drift
• voltage-drift

• "电压"英文翻译    voltage; electric tension; e ...
• "漂移"英文翻译    be driven by the current; dr ...
• "输入补偿电压漂移" 英文翻译 :    input offset voltage drift
• "输入偏移电压漂移" 英文翻译 :    drift input offset voltage; input offset voltage drift
• "风压漂移" 英文翻译 :    leeway
• "偏压漂移" 英文翻译 :    bias drift
• "漂移电压" 英文翻译 :    drift voltage
• "等效漂移电压" 英文翻译 :    equivalent drift voltage
• "漂移" 英文翻译 :    1.(漂流移动) be driven by the current; drift about2.[电子学] drift; shift; shifting; shunt running; creeping; wander◇漂移浮标 drifting buoy; 漂移度 driftance; 漂移晶体管 drift transistor; 漂移力 drift force; 漂移率 drift rate; drift mobility; 漂移区 drift region; 漂移速度 drift velocity; 漂移误差 drift error
• "立式高压漂煮锅" 英文翻译 :    vertical high pre ure kier; vertical high pressure kier
• "电压" 英文翻译 :    voltage; electric tension; electric voltage
• "低漂移" 英文翻译 :    low drift
• "峰漂移" 英文翻译 :    peak shift
• "风漂移" 英文翻译 :    wind drift
• "氦漂移" 英文翻译 :    helium drift; heliumdrift
• "库漂移" 英文翻译 :    repertoire shift
• "零漂移" 英文翻译 :    zero drift; zero shift
• "慢漂移" 英文翻译 :    slow drift
• "漂移，偏航" 英文翻译 :    drift
• "漂移，移动" 英文翻译 :    wander
• "漂移；漂流" 英文翻译 :    float
• "漂移冰" 英文翻译 :    drift ice
• "漂移波" 英文翻译 :    drift wave
• "漂移的" 英文翻译 :    erratic
• "漂移度" 英文翻译 :    driftance

• Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
  Mosfet阈值电压漂移辐照效应辐照敏感性
• Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
  低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟
• Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad
  摘要半桥逆变器应用广泛，但存在直流分压电容不均压，使分压电容中点电压漂移，导致输出电压和电流畸变的缺点。
• Specific issues examined are : compensation for the variation of the stator resistance , the offset error of the dc bus voltage , the voltage error generated by the forward voltage drop the dead time of the switches , improvement of the steady state performance , and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis
  定子电阻变化，直流母线电压漂移，开关器件反向相电压降、逆变器死区时间引起的电压误差的补偿，提高系统稳态运行性能以及永磁同步电机直接转矩控制的无速度传感器运行方案等问题都是本文研究的重点。转矩的快速响应是直接转矩控制算法的一个卓越的性能。
• An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry
  该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。
• Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
  在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。

• 电压漂移的法语：dérive de tension