热处理条件的英文

• heat treat condition
• heat treat treatment condition
• heat treated condition
• heat treated treatment condition
• heat treatment condition

• "热处理"英文翻译    heat treatment; heat treatin ...
• "条件"英文翻译    condition; term; factor
• "可热处理条件" 英文翻译 :    heat treat conditions
• "表处理条件" 英文翻译 :    list processing condition
• "处理条件" 英文翻译 :    treatment conditions
• "预应变热处理条件下残余奥氏体的分布机理" 英文翻译 :    distribution mechanism of residual austenitic under prestrain heat treatment
• "地理条件" 英文翻译 :    geolgical conditions
• "物理条件" 英文翻译 :    physical conditions
• "热处理" 英文翻译 :    [冶金学] heat treatment; heat treating◇热处理保护涂料 heat treatment protective coating; 热处理车间 heat treatment department; 热处理钢 heat-treated steel; 热处理炉 heat treatment furnace; heat treating furnace; 热处理膜 [冶金学] heat-treating film; 热处理设备 heat-treating facility
• "病理条件反射" 英文翻译 :    pathological condition reflex; pathological conditioned reflex
• "病理条件联系" 英文翻译 :    pathologic conditioned connection; pathological conditioned connection
• "经济合理条件" 英文翻译 :    condition of economy and rationality
• "自然地理条件" 英文翻译 :    physio geographic condition; physiographic condition
• "废物处理条例" 英文翻译 :    waste disposal ordinance
• "标准热处理" 英文翻译 :    standard heat of formation
• "表面热处理" 英文翻译 :    hot surface treatment; surface heat treatment; thermolized; thermolizing
• "玻璃热处理" 英文翻译 :    heat treatment of glass
• "箔袋热处理" 英文翻译 :    foil heat treatment
• "箔片热处理" 英文翻译 :    foil heat treatment
• "不可热处理" 英文翻译 :    non-heat-treatable
• "沉淀热处理" 英文翻译 :    precipitation heat treatment
• "成品热处理" 英文翻译 :    heat treatment for finished product
• "初步热处理" 英文翻译 :    preliminary heat treatment
• "磁场热处理" 英文翻译 :    magnetic heat treatment
• "磁致热处理" 英文翻译 :    field annealing

• Note : the above heat treatment conditions are all in an oxidation atmosphere
  注:以上热处理条件均是在氧化气氛中
• In this paper , the condition of direction - nitridation , the kinetics and nitridation mechanism are discussed in experiment and theoretically
  本文研究了硅片在热处理条件下的氮化条件和动力学，并从理论上探讨氮化机理，得到了很好的结果。
• 5 . manganin thin films with low temperature coefficient of resistance were prepared by magnetron sputtering . the changes of tcr under difference deposition and heat treatment conditions were studied
  首次采用磁控溅射法沉积了低电阻温度系数的锰铜薄膜，研究了在不同电子科技大学博士学位论文沉积及热处理条件下薄膜tcr的变化。
• The efficiency and the homogeneity of cavities gettering were analyzed by measuring the leakage - current for the diodes in a wafer , which was thermally treated at the optimal condition , that is 700 1hr , then 800 6hr and slow cooling down
  第二阶段，氦微孔吸杂效果的研究。采用做有二极管的大硅片在700 lhr + 800 6hr + ’漫降温的热处理条件下对微孔吸杂的效率、均匀性进行实验。
• Annealing the v2o5thin film at 480 , under l - 2pa for 20 minutes , the vo2 polycrystalline thin film with the resistivity change larger than 3 orders through the transition temperature was obtained . the transition temperature was influenced by the heating condition in vacuum
  实验证明，选择合适的成膜热处理条件和真空烘烤条件是实现sol - gelv _ 2o _ 5结构向vo _ 2结构成功转换的关键。
• The techniques of preparing film buffer layers on si were studied . the sem , tem and xrd were adopted to study the crystal structure of films . the influences of buffer layers , substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed
  进一步用扫描电镜、透射电镜和x射线衍射仪研究了薄膜组织结构和结晶情况，分析了缓冲层和衬底对ybco薄膜制备的影响、以及不同热处理条件对薄膜结晶结构及性能的影响。
• On the basis of preparing powders with usual technological parameters of thermal spray , the influences on powders properties of ball milling time , assistant reagents of ball milling and conditions of heat treatments are discussed , and then it comes to the optimal preparation project
  在采用常规热喷涂工艺参数进行粉末制备的基础上，讨论了球磨时间、球磨助剂、热处理条件对粉末性质的影响，得出最佳的制备方案。该方法可以制备出粒度分布均匀、性质稳定，粒度为200 500nm的超细铜锌粉末。
• Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property . many researches have been made on silicon nitride , especially on preparation for it with all kinds of cvd ( chemical vapor deposition ) . but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail , especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment
  氮化硅( si _ 3n _ 4 )具有许多特殊的优越性能，是一种前景广阔的薄膜材料，并已广泛应用于微电子、光电子领域，人们对此做了大量的研究，但主要集中在用各种化学气相沉积的薄膜制备上，对直接氮化法的机理和动力学研究较少，特别是硅片在氮气保护的热处理条件下的直接氮化行为研究更少，甚至对硅片在热处理条件下能否与惰性的氮气发生反应等问题依然存在争论。