漏源电压的英文

• drain source voltage
• drain-source voltage

• "漏"英文翻译    leak; drip
• "源"英文翻译    source; fountainhead
• "电压"英文翻译    voltage; electric tension; e ...
• "漏源电阻" 英文翻译 :    drain source resistance; drain-source resistance
• "源电压" 英文翻译 :    source voltage
• "漏源击穿电压" 英文翻译 :    drain source breakdown voltage
• "漏极源极电阻 漏源电阻" 英文翻译 :    drain-sourceresistance
• "电源电压" 英文翻译 :    anschluspannung; mains input; power line voltage; power supply voltage; power-line voltage; powersupply voltage; powersupply's voltage/mains voltage; sour voltage; source voltage; supply pressure; supplyvoltage; voltage of supply; working voltage
• "电源电压6" 英文翻译 :    v-boost
• "电源电压表" 英文翻译 :    line meter
• "电源电压接" 英文翻译 :    voltage switch of sps
• "光源电压" 英文翻译 :    voltage of light source
• "源电压失真" 英文翻译 :    source voltage distortion
• "源电压效应" 英文翻译 :    source voltage effect
• "漏源极击穿电压" 英文翻译 :    drain source breakdown voltage
• "电源电压变动" 英文翻译 :    supply voltage variation
• "电源电压波动" 英文翻译 :    mains voltage fluctuation; power supply voltage fluctuation
• "电源电压颤动" 英文翻译 :    power supply flutter
• "电源电压控制" 英文翻译 :    line voltage control
• "电源电压脉动" 英文翻译 :    power supply flutter
• "电源电压误差" 英文翻译 :    supply-voltage error
• "焊接电源电压" 英文翻译 :    welding load voltage
• "交流电源电压" 英文翻译 :    line voltage
• "内部电源电压" 英文翻译 :    ivpwr internal power supply voltage
• "汽车电源电压" 英文翻译 :    vpwr vehicle power supply voltage

• The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
  详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。
• In this paper , the working principle of the interleaving two - transistor forward converter is analyzed in detail , and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions . the simulation model is constructed and the simulation results verify the analysis
  本文分析了交错并联双管正激变换器的工作原理,研究了在不同占空比条件下开关管的漏源电压和变压器励磁电流波形,建立了仿真模型,仿真结果证明理论分析的正确性。
• We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
  本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、 mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。