注入电流的英文

• injection current

• "注入"英文翻译    pour into; empty into; inpou ...
• "电流"英文翻译    electric current
• "注入电流值" 英文翻译 :    injected value of current
• "注入电荷" 英文翻译 :    injected charge
• "注入电极" 英文翻译 :    injecting electrode
• "注入电浆" 英文翻译 :    injected plasma
• "注入电路" 英文翻译 :    injection circuit; injector circuit; pumping circuit
• "注入电平" 英文翻译 :    injection level
• "注入电压" 英文翻译 :    injecting voltage; injection voltage
• "插入电流" 英文翻译 :    inserting current
• "介入电流" 英文翻译 :    offering circuit
• "流入电流" 英文翻译 :    inrush current
• "侵入电流" 英文翻译 :    inrush current
• "输入电流" 英文翻译 :    arrival current; incoming current; input current; received current
• "写入电流" 英文翻译 :    write current
• "引入电流" 英文翻译 :    pull-in current
• "涌入电流" 英文翻译 :    inrush current
• "注入电极结构" 英文翻译 :    injecting electrode structure
• "注入电致发光" 英文翻译 :    injection lelctroluminescence
• "额定输入电流" 英文翻译 :    rated power current
• "减低写入电流" 英文翻译 :    rwc reduced write current
• "静态写入电流" 英文翻译 :    quiescent write current
• "平均输入电流" 英文翻译 :    average current input; secondary voltage rise time
• "输入电流曲线" 英文翻译 :    arrival current curve; arrival curve
• "液体注入电容器" 英文翻译 :    liquid-impregnated capacitor

• As the injection current is increased above the threshold value (10.7-24), the laser oscillation intensity builds up .
  当注入电流增加到由式（107-24）表示的阈值以上时，激光振荡强度就会增长。
• We measured experimentally the change of emergent polarized light cause by injection current
  通过实验测量了vcsel的出射偏振光随着注入电流的变化。
• The result showed that the unstable factors of vcsel ' s emergent polarized light are anisotropic effect
  结果表明影响vcsel输出光偏振不稳定性的因素是各向异性效应和注入电流。
• As the injection current is increased above the threshold value ( 10 . 7 - 24 ) , the laser oscillation intensity builds up
  当注入电流增加到由式（ 10 7 - 24 ）表示的阈值以上时，激光振荡强度就会增长。
• We deduced theoretically that the polarized light change with the increase of injection current and measured experimentally the process of polarized light ' s direction change with the injection current
  理论上得出了随着注入电流的增加，偏振光发生变化；实验上测量出了随着注入电流的增加，偏振光的方向发生变化的过程。
• ( 3 ) with the increase of the injected current , the lasing wavelength of fgesl appears fluctuation , the side mode suppression ratio ( smsr ) increases accompanied by an oscillation , and the p - i curve distorts slightly
  Fgesl的激射波长随ld的注入电流的增大而发生波动;边模抑制比( smsr )随注入电流的增大总体上呈现上升趋势，但其变化过程并不平滑而是有较大的波动; fgesl的p一i曲线有微小的扭曲。
• The advantages of the two methods are combined together in the pseudo - random current injection testing method , which improves the efficiency and correctness of the test , and which is much more operable , thus it is very applicable in built - in - self - testing of analog and mixed signal circuits in system chips
  伪随机注入电流测试法结合了两种方法的优点,提高了测试的效率和正确性,实现时简单易行,非常适合于系统芯片中对模拟及混合信号电路的内建自测试。
• After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes , the theoretical model of the leds * light - emitting efficiency was presented . based on this model , the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically , we found the calculated results agreed very well with the experimental results under the electric field from 0 . 5 x 106 to 1 . 5 x 106v / cm , the numeral calculations and theoretical analyzes of the light - emitting efficiency were done . the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination , the light - emitting efficiency was affected by many factors
  本文主要研究聚对苯乙炔（ ppv ）薄膜发光二极管发光效率及主要影响因素，简单地介绍了ppv薄膜发光二极管的研究背景及发展趋势、 ppv器件的结构和性质后，提出了一个计算器件发光效率理论模型，利用这个理论模型得出了发光效率公式的表达式：并对注入电流、复合效率等进行了数值计算，通过合理地选择计算参数，发现计算值在场强为0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范围内与实验结果较好地符合，在此基础上，对发光效率进行了数值计算和理论分析，结果表明：计算结果与理论研究结果相符较好，得出结论如下： （ 1 ）本文的理论推导正确地反映了器件中载流子的注入、传输和复合等基本机制； （ 2 ） ppv薄膜中的电致发光是激子复合的结果，发光效率受多种因素影响。
• In this work , based on the threshold condition of the fiber grating external cavity semiconductor laser ( fgesl ) which the phase of the fiber grating has been included , the effect of the temperature variation and the fg external cavity length on the lasing wavelength of the fgesl has been investigated theoretically . in addition , we have used the phase condition of fgesl to get the longitudinal mode distribution of fgesl , then the influence of the injected current on the output characteristics of fgesl has been studied
  基于此，本文中利用阳实际的反射相位分布，计及半导体激光器( ld ) 、外腔及光纤光栅( fg )三者的共同作用，根据fgesl满足的闽值条件，从理论上研究了温度及外腔长度的变化对fgesl激射波长的影响;根据fgesl中纵模所满足的相位条件得到其纵模分布后，利用fgesl满足的多模速率方程，研究了ld的注入电流对fgesl输出特性的影响。
• High power semiconductor lasers are widely used in communication , surgery , military , printing and optical pump . but for traditional laser , the output optical power , which is increased by increasing the injecting current , will be limited by the electro - thermal destroy and the catastrophic optical damage ( cod ) at high optical power
  大功率半导体激光器在光通讯、医疗、军事、印刷和光泵浦等领域有着广泛的应用，然而当通过增加注入电流提高传统半导体激光器的光束出功率时，要受到电热烧毁和光腔面灾变性损坏( cod )的限制。