注入剂量的英文

• implantation dose

• "注入"英文翻译    pour into; empty into; inpou ...
• "剂量"英文翻译    dosage; dose; dosis
• "离子注入剂量" 英文翻译 :    ion implantation dosage
• "注入剂" 英文翻译 :    impregnant; injectant
• "注入剂前缘" 英文翻译 :    injection-fluid front
• "吸入剂量" 英文翻译 :    inhalation dose
• "低剂量离子注入" 英文翻译 :    low dosage ion implantation
• "高剂量离子注入" 英文翻译 :    high dosage ion implantation
• "插入剂" 英文翻译 :    intercalating agent; intercalator
• "吹入剂" 英文翻译 :    insufflation
• "加入剂" 英文翻译 :    introducer
• "浸入剂" 英文翻译 :    intrusion agent
• "吸入剂" 英文翻译 :    inhalants; insufflation
• "楔入剂" 英文翻译 :    wedging agent
• "植入剂" 英文翻译 :    implants , inserts; ocular implant
• "注入" 英文翻译 :    pour into; empty into; inpouring; injection; infusion [拉丁语]; infunde [法国]; abouchement; influxion 将水注入容器 pour water into a vessel; 长江注入东海。 the changjiang river empties into the east china sea
• "剂量" 英文翻译 :    [物理学] [医学] dosage; dose; dosis◇剂量槽 dosage bunker; 剂量测定(法) dosimetry; health work; 剂量当量 [核子] dose equivalent; 剂量计 dosimeter; dosemeter; radiacmeter; 剂量器 dosimeter; dispensing apparatus; 剂量学 [核子] dosimetry; radiation dosimetry; dosiologyy; 剂量仪 dosemeter; dosimeter
• "dna嵌入剂" 英文翻译 :    dna intercalator
• "鼻用吸入剂" 英文翻译 :    nasal inhalation
• "含水加入剂" 英文翻译 :    humectant
• "皮内植入剂" 英文翻译 :    intradermal implants
• "嵌入剂，插层剂" 英文翻译 :    intercalator
• "熔体加入剂" 英文翻译 :    melted addition
• "溶媒吸入剂" 英文翻译 :    solvent inhalation
• "吸入剂，吸入（法）" 英文翻译 :    inhalation

• Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
  附加电极半径对空心圆管端点附近离子注入剂量的影响
• The surface hardness variations of some kinds of polymers were compared and the influence factors such as ion species , particle energy and dose were analyzed
  通过比较几种不同类型的聚合物材料在注入前后表面硬度的变化，分析注入离子种类、注入能量、注入剂量等工艺参数对聚合物的影响。
• With increasing implantation dose , the thickness of the box layer increases while that of the si over - layer decreases . the thickness of the si over - layer is dependent of the ion energy
  通过调节注入能量可获得所需要的不同表层硅厚度的soi结构材料，但为获得高质量的soi材料，注入能量需要和注入剂量有合适的匹配。
• Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer . through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
  针对目前厚外延工艺的缺点，提出的薄外延ldmos采用n埋层，通过优化n埋层长度、注入剂量可提高器件耐压。
• During the study on the mutation effects of ion beam on arabidopsis seeds , it was found that the sensitivity degree of different ecotype seeds was different . plant survival rate could be affected by different ions " energy and ions " type
  在对离子注入拟南芥种子引起的诱变效应的研究过程中发现，不同生态型拟南芥种子对注入剂量的敏感度不同，离子能量、离子类型对种子成苗率也有影响。
• The soi is of crystal quality and the box is uniform in thickness , with the interfaces of si / sioa / si smooth and sharp . we have systematically studied the dependence of the formed soi structure on the process parameters , such as ion energy , implantation dosage , substrate temperature , as well as the annealing temperature . with xtem , sims , srp , rbs , ir , raman , aes , xps and other characterization tools , it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
  本论文还系统地研究了不同注入剂量、注入能量、注入时基底温度以及退火温度对所形成soi结构性能的影响，借助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等测试分析手段，我们发现，与传统注氧隔离( simox )技术类似，存在着“剂量窗口”形成优质的soi材料，但在水等离子体离子注入方式中soi材料结构质量对剂量变化更为敏感，随着注入剂量的增大， soi材料的埋层厚度增大而表层硅厚度减小。
• Secondly , we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration , square resistance and carrier mobility ) . after comparing and analyzing , we can know that the electrical properties were affected by the difference of mn dose , the implantation of c and the annealing temperature
  其次，利用霍尔测试方法测量了每种离子注入样品的电性质(方块载流子浓度、方块电阻及载流子迁移率) ，通过比较分析了解到mn元素注入剂量、 c元素的注入以及退火温度的不同，都会对样品的电性质产生影响。
• During the high - voltage device design , the thick epitaxial layer ldmos which is compatible with current technology was researched . this device used piecewise vld and multiple region structure f reduce field layer . the using of the f reduce field layer effectively reduce the surface electric field of the device , shorten the length of its drift region , enlarge the choice of range of the ion implant dose of the p layer , and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
  在高压器件研究中对与现有工艺相兼容厚外延ldmos进行研究，该结构采用分段变掺杂多区p ~ -降场层，有效降低器件的表面电场，缩短器件的漂移区长度，增大p ~ -降场层注入剂量的选择范围，并有效地抑制界面电荷qss对器件耐压的不利影响。
• Nowadays , separation by implantation of oxygen ( simox ) and smart - cut are two major methods to commercially supply soi wafers , but these soi wafers are much expensive than si wafers due to the long time ion implantation required for the high dosage ( 1017 - 10l8cm - 2 ) by conventional beam - line ion implanters , which , to some extent , embarrasses its widespread adoption in mainstream microelectronic products
  目前制约soi技术商业应用的重要因素之一是soi圆片过低的产量和过高的价格，主要原因是使用传统线扫描式离子注入机需要很长时间才能达到所需的注入剂量( 10 ~ ( 17 ) 10 ~ ( 18 ) cm ~ ( - 2 ) ) 。
• Mint total dna was transferred into a . thaliana mediated by ion beam with the influence of 0 . 5 10 1 . 5 1017 and 2 . 5 1017 ions / cm2 , respectively , which were on the bridge of saddle . among three transferred populations , their budding , seedling , growth and phenotypic variation took on obvious difference . combining these facts , the influence of 1 . 5 1017ions / cm2 was decided as transformation influence of the following work
  我们从另外一个角度出发，在离子注入剂量-拟南芥菜存活曲线的基础上，选择不同的离子剂量介导薄荷全dna转化拟南芥菜，根据各个转化群体在遗传和生理上的不同变化，选择1 . 5 10 ~ ( 17 ) ions cm ~ 2作为我们以后转化工作的转化剂量。