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泊松方程的英文

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"泊松方程"怎么读用"泊松方程"造句

英文翻译手机手机版

  • poi on'sequation
  • poisson equations
  • poisson's equation

例句与用法

  • To see what error was engendered in the process, we now allow ni to differ from ne and use the linearized poisson equation .
    为了研究在这个过程中引起了多少误差,我们让ni与ne不相同,并用线性化的泊松方程
  • Rational macro - element method applied in poisson ' s equation
    有理宏单元法求解泊松方程
  • Some limit theorems on the transforms for functional of nonhomogenous markov chain
    泊松方程非等间距有限差分的数值求解方法
  • Poisson ' s equation
    泊松方程
  • According to the basic idea of finite element method constructs computer procedure to solve the poisson equation
    基于有限元法的基本思想构造计算机程序用于求解泊松方程
  • First , according to the actual organic static induction transistor establishing the physical model and selecting appropriate structure parameters , solves poisson ' s equation by adopting finite element method
    首先根据实际制作的有机静电感应三极管建立物理模型,选取合适的结构参数,采用有限元法求解泊松方程
  • By solving possion equation , the automotive generation of 3 - d body - fitted coordinates ( bfc ) grid system is completed with its density controlled by the distribulation functions p , q , r . 4 . a detailed description of the solving mode
    用微分方程法生成计算网格,采用泊松方程完成无堵塞泵的三维贴体网格的自动生成,通过构造波松方程源项p 、 q 、 r分布函数控制网格的疏密度; 4
  • During the research of the novel high - voltage soi lateral structure , we established its blocking theory based on poisson equation , which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state
    在新型横向高压器件结构tsoi的研究中,本文通过二维泊松方程建立其解析理论,正确描述了漂移区中电场的分布,并阐明其耐压机理。
  • The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations . by the combination of spice mos ( level = 3 ) and the macro model , the complete dddmos model was then obtained , which accords well with simulated data . by simulating and comparing different devices of different process parameters , the model is applicable for different bias regions and can be useful in the power integrated circuit research in future
    首先介绍了器件建模的基本原理及相关模拟技术,然后利用工艺模拟软件生成器件基本结构,并对其基本特性进行了分析;分析了业内和学术界比较通用的高压器件建模的方法,随后在模拟实验的基础上着重分析了dddmos的物理特性,在求解泊松方程、连续性方程等基本方程的基础上,建立有物理意义的漂移区电阻的宏模型;随后结合spicemos ( level = 3 )模型而得到完整的dddmos模型,此模型与模拟数据符合得比较好,通过对不同工艺参数的器件进行模拟比较,该模型能够覆盖不同的工作偏压范围,具有较明确的物理意义,对今后的功率集成电路的研发有一定的参考意义。
  • There are many kinds of ways to solve the electrostatic field of two - dimensional laplace ’ s equation or the poisson ' s equation , like the separation of variables , green ’ s function or alternative means . but if their boundary shapes are quite complex , it is extremely difficult to use these usual methods , and , in general , it is impossible to work out even there is such peculiar instance as analytic solution , or obtains the approximate solution
    对二维拉普拉斯方程或泊松方程的平面场的解法有多种,如分离变量法、格林函数法或者其他方法,但如果它们的边界形状比较复杂,用这些通常的方法求解会非常困难,即使对于存在有解析解的特殊情况,一般说来也不可能求出,而且求得的只能是近似解。
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用"泊松方程"造句  

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百科解释

泊松方程()是数学中一个常见于静电学、机械工程和理论物理的偏微分方程式,因法国数学家、几何学家及物理学家泊松而得名的。
详细百科解释
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