氧等离子体的英文

• oxygen plasma
• plasma oxygen cutting

• "氧"英文翻译    oxygen
• "等离子体"英文翻译    plasma; plasma body
• "氧等离子体去胶" 英文翻译 :    oxygen gas plasma stripping
• "氧等离子切割" 英文翻译 :    oxygen plasma arc cutting
• "靶等离子体" 英文翻译 :    target plasma
• "钡等离子体" 英文翻译 :    barium plasma
• "超等离子体" 英文翻译 :    epiplasma
• "磁等离子体" 英文翻译 :    magnetic plasma; magnetoplasma
• "等离子体" 英文翻译 :    plasma; plasma body (一般指电离的气体, 由离子、电子及未经电离的中性粒子所组成, 如火焰和电弧中的高温部分, 太阳和其它恒星的表面气层等)
• "等离子体波" 英文翻译 :    plasma waves
• "等离子体层" 英文翻译 :    plasmasphere
• "等离子体刀" 英文翻译 :    plasma scalpel
• "等离子体管" 英文翻译 :    plasma tube; plasmatron
• "等离子体弧" 英文翻译 :    plasma arc
• "等离子体环" 英文翻译 :    plasma torus
• "等离子体怜" 英文翻译 :    plasma flow
• "等离子体流" 英文翻译 :    plasma flow; plasma jet; plasma stream
• "等离子体炉" 英文翻译 :    plasma furnace; plasmafurnace
• "等离子体片" 英文翻译 :    plasma sheet; plasmasheet
• "等离子体器" 英文翻译 :    plasmatron
• "等离子体枪" 英文翻译 :    plasma gun; plasma jet
• "等离子体区" 英文翻译 :    plasma slab
• "等离子体势" 英文翻译 :    plasma potential
• "等离子体态" 英文翻译 :    plasma state
• "等离子体团" 英文翻译 :    plasmoid

• Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
  原位氧等离子体处理对金刚石薄膜电阻率的影响
• In order to modify wool fabrics properties , low - temperature oxygen plasma is used to treat wool fabric
  摘要为了改善羊毛织物的毡缩、润湿等性能，采用低温氧等离子体对羊毛织物进行改性处理。
• This could increase the work function of ito , which would decrease the device threshold voltage and increase the luminescence efficiency consequently
  因此,采用氧等离子体处理的ito薄膜作为oled的阳极将降低发光器件的开启电压,提高其发光效率。
• On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
  另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。
• It is found that ito surface roughness decreased after oxygen plasma treatment , which can improve its wetting performance and consequently improve the film performance
  经氧等离子体处理后, ito薄膜的表面粗糙度减小,平整度提高,提高了ito薄膜表面的润湿性能,改善了有机物在其表面的成膜性能。
• In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
  本论文创造性地采用水等离子体离子注入方式代替传统的氧离子注入方式来制备soi结构材料，由于水等离子体中的三种离子h _ 2o ~ + 、 ho ~ +和o ~ +质量数相差很小，克服了氧等离子体中因o _ 2 ~ +和o ~ +质量数相差大而引起的氧在硅中的分布弥散，使注入硅后的氧射程分布相对集中，比较容易退火后形成soi结构材料。
• The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol , naoh , sulfuric and oxygen plasma , were studied from microscopic view by atomic force microscopy , x - ray photoelectron spectroscopy and goniometer
  ( 1 )利用原子力显微镜、接触角测试仪、紫外分光光度计从微观角度研究了乙醇、氢氧化钠、浓硫酸、氧等离子体处理对ito薄膜的表面性能和光电性能的影响。

• 氧等离子体的日语：さんそプラズマ