氢等离子体的英文

• hydrogen plasma

• "氢"英文翻译    hydrogen
• "等离子体"英文翻译    plasma; plasma body
• "重氢等离子体" 英文翻译 :    deuterium piston
• "氢等离子" 英文翻译 :    hydrogen plasma
• "氢等离子流" 英文翻译 :    hydrogen plasma jet
• "氢等离子弧过程" 英文翻译 :    hydrogen plasma arc process
• "靶等离子体" 英文翻译 :    target plasma
• "钡等离子体" 英文翻译 :    barium plasma
• "超等离子体" 英文翻译 :    epiplasma
• "磁等离子体" 英文翻译 :    magnetic plasma; magnetoplasma
• "等离子体" 英文翻译 :    plasma; plasma body (一般指电离的气体, 由离子、电子及未经电离的中性粒子所组成, 如火焰和电弧中的高温部分, 太阳和其它恒星的表面气层等)
• "等离子体波" 英文翻译 :    plasma waves
• "等离子体层" 英文翻译 :    plasmasphere
• "等离子体刀" 英文翻译 :    plasma scalpel
• "等离子体管" 英文翻译 :    plasma tube; plasmatron
• "等离子体弧" 英文翻译 :    plasma arc
• "等离子体环" 英文翻译 :    plasma torus
• "等离子体怜" 英文翻译 :    plasma flow
• "等离子体流" 英文翻译 :    plasma flow; plasma jet; plasma stream
• "等离子体炉" 英文翻译 :    plasma furnace; plasmafurnace
• "等离子体片" 英文翻译 :    plasma sheet; plasmasheet
• "等离子体器" 英文翻译 :    plasmatron
• "等离子体枪" 英文翻译 :    plasma gun; plasma jet
• "等离子体区" 英文翻译 :    plasma slab
• "等离子体势" 英文翻译 :    plasma potential

• Standard test method for determining hafnium in zirconium and zirconium alloys using the d - c argon plasma spectrometer
  使用氢等离子体光谱计测定锆和锆合金中铪的标准试验方法
• Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
  9 ）的提高；先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
• Abstract : some plasma sources in plasma microwave devices have been introduced and analyzed in this paper , the design and its driving circuit of a compact hydrogen plasma gun have been discussed in detail
  文摘:介绍和分析了几种等离子体微波器件中等离子体源，重点讨论了紧凑型氢等离子体枪的设计及其驱动电路。
• The method of preparing the uniform coating , the techniques of thermal bonding and hydrogen plasma treatment was investigated experimentally . the optimum coating method and technological parameters was summarized
  重点探索了涂覆金刚石纳米涂层的方法、实现金刚石与金属钛的热粘接工艺以及氢等离子体处理的工艺参数，筛选出了在本实验系统中的最佳方法和工艺条件。
• Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range , infrared reflectance and low d . c . resistivity ) to ito films , but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito
  Al掺杂的zno薄膜，由于具有与ito ( in _ 2o _ 3中适量掺杂sn )薄膜相比拟的对可见光的高透过率和高电导，又因其在氢等离子体中的高稳定性等优点，已成为替代ito透明导电薄膜的研究热点。
• Furthermore , they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma , which is of significance for applications related to amorphous silicon solar cell . so the study on zao film is becoming fashionable
  而zno ： al ( zao )薄膜由于具有优良的光电特性而成为ito薄膜的潜在替代材料，且它还具有原材料来源丰富、成本低廉、无毒以及在氢等离子体中具有较好的稳定性等优点，是目前研究的热点薄膜材料之一。
• However , the refractive index will increase with the increase of the flow ratio of sifu / nhs , slightly increase with the increase of substrate temperate , and decrease with the increase of rf power . by measuring the passivation results of hydrogen plasma and sinx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time . the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down
  通过测试氢等离子体钝化和氮化硅薄膜钝化的效果，实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显，但是这种提高作用与处理温度以浙江大学硕士学位论文王晓泉2003年5月及时间的关系不大；氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用，但经过高温处理后这种作用消失；氮化硅薄膜能提高单晶硅和多晶硅的少子寿命，具有表面钝化和体钝化的双重作用；氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度，进而使电池效率有不同程度（绝对转换效率0
• In recent years , al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range , low electrical resistivity ) to ito films , but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito
  近年来,由于al掺杂的zno薄膜( azo )具有与ito薄膜相比拟的光电性能(可见光区高透射率和低电阻率) ,又因其价格较低以及在氢等离子体中的高稳定性等优点,已经成为替代昂贵的ito薄膜的首选材料和当前透明导电薄膜领域的研究热点之一。
• Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently . al doped zno thin films also can obtain a tunable band gap . especially , zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet
  Al掺杂的zno薄膜不仅具有与传统ito薄膜相比拟的光电性质,而且原材料丰富、价格低、无毒、沉积温度低、热稳定性高,在氢等离子体环境中具有很高的化学稳定性,不易导致太阳能电池材料活性降低。