气体反应的英文

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"气体反应"怎么读用"气体反应"造句

英文翻译手机版

gas reaction

"气体"英文翻译 gas; gaseous fluid
"反应"英文翻译 neaction
"气体反应堆" 英文翻译 : gas reactor
"气体反应律" 英文翻译 : law of gas reaction
"气体反应器" 英文翻译 : gas reactor
"全气体反应" 英文翻译 : all gaseous reaction
"气体反应定律" 英文翻译 : law of gas reaction; law of gaseous reaction
"气体液体反应" 英文翻译 : gas liquid reaction
"终结气体反应" 英文翻译 : end gas reaction
"发生炉气体反应" 英文翻译 : producer gas reaction
"气体反应体积定律" 英文翻译 : law of combining volumes of gases
"气体反应载品台" 英文翻译 : gas reaction stage
"理想气体反应的等温方程" 英文翻译 : isothermal equation of ideal gaseous reactions
"热谱高温气体反应堆" 英文翻译 : thermal spectrum high temperature gas reactor
"气体反冲式" 英文翻译 : blowback
"气体反压法" 英文翻译 : gas counter pressure process
"单体反应性" 英文翻译 : monomer reactivity; reactwity of monomer
"顶体反应" 英文翻译 : acrosomal reaction; acrosome reaction
"机体反应性" 英文翻译 : reactivity of organism
"抗体反应" 英文翻译 : antibody response
"躯体反应" 英文翻译 : somatic reaction
"群体反应" 英文翻译 : mass reaction
"人体反应" 英文翻译 : human response
"三体反应" 英文翻译 : three-body reaction
"身体反应" 英文翻译 : physical responses; somatic reaction

例句与用法

Equilibrium constants for reactions of ideal gases
平衡常数理想气体反应
Isothermal equation of ideal gaseous reactions
理想气体反应的等温方程
Producer gas reaction
发生炉气体反应
Royco 889 is a synthetic - based lubricant formulated for use in gas compression applications that require wide operating temperature ranges and minimun interaction between the lubricant and the process gas
Royco 889是一种合成型的润滑油，专门设计用于需要宽工作温度范围且能最大程度上减少润滑油与气体反应的气体压缩过程。
The pyrolysis mechan ism functions of the second stage of dvb / hpso and vpso / hpso are both parabola principle , and the rates of pyrolysis reactions in this stage are both controlled by one - dimensional diffusion
600时， ai可与先驱体裂解产生的含碳小分子气体反应生成a14c3 ， 800时ai可与裂解气氛nz反应生成ain ，温度升高， al的氮化反应不断进行。
A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by cvd , while supplying a first process gas for film formation and . a second process gas for reacting with the first process gas to a process field accommodating the target substrate
本发明揭示一种用于半导体制程之薄膜形成方法，其系配置成藉由cvd在目标基板上形成薄膜，同时将用于薄膜形成的第一制程气体及用于与该第一制程气体反应的第二制程气体供应至一容纳该目标基板的制程区域。