掩蔽作用的英文

• masking action
• masking effect

• "掩蔽"英文翻译    screen; shelter; cover; mask ...
• "作用"英文翻译    act on; affect
• "听觉掩蔽作用" 英文翻译 :    aural masking
• "磁屏蔽作用" 英文翻译 :    magnetic screening action
• "电屏蔽作用" 英文翻译 :    electric screening action
• "屏蔽作用" 英文翻译 :    screening action; shielding action; shielding activate; shielding effect
• "声屏蔽作用" 英文翻译 :    acoustic shielding effect
• "隐蔽作用" 英文翻译 :    biding effect; sequestration
• "遮蔽作用" 英文翻译 :    bridging effect
• "胶体遮蔽作用" 英文翻译 :    colloid mask
• "掩蔽" 英文翻译 :    screen; shelter; cover; mask; blanket; hide; defilade; audio masking; aural masking; ensconce 掩蔽目标 cover up the object; keep from sight; 这个土丘可做我们的掩蔽物。 the mound can be used as our screen.; 掩蔽处 cover; 掩蔽地 [军事] covered position; 掩蔽工事 covered works; 掩蔽壕 [军事] sheltertrench; 掩蔽所 shelter; 掩蔽物 [物理学] blanket material; [军事] screen; 掩蔽阵地 covered position
• "超掩蔽" 英文翻译 :    cross masking
• "覆盖，掩蔽" 英文翻译 :    shroud v. cover and hide
• "光掩蔽" 英文翻译 :    optical masking; photo masking
• "后掩蔽" 英文翻译 :    post masking
• "解掩蔽" 英文翻译 :    demasking
• "屏蔽；掩蔽" 英文翻译 :    shield
• "前掩蔽" 英文翻译 :    pre masking
• "去掩蔽" 英文翻译 :    demasking
• "色掩蔽" 英文翻译 :    masking color
• "声掩蔽" 英文翻译 :    acoustical masking; audio masking; masking audio; sound masking
• "未掩蔽" 英文翻译 :    unshadable
• "下掩蔽" 英文翻译 :    expose
• "掩蔽，庇护" 英文翻译 :    shelter
• "掩蔽板" 英文翻译 :    masking plate

• The noise occultation was significant , and the undertone was the easiest one to be occulted
  噪音对信号的掩蔽作用显著，其中低音最易被掩蔽。
• At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
  在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。

• 掩蔽作用的日语：マスクさよう マスク作用