拉晶的英文

• pulldown
• pulled crystal

• "拉"英文翻译    cut; slash; slit
• "晶"英文翻译    brilliant; glittering
• "拉晶法" 英文翻译 :    crystal pulling method; crystalpulling method; drawing method; pulling of crystal; pulling technique
• "拉晶机" 英文翻译 :    crystal puller; crystal pulling machine; crystal-pulling machine
• "拉晶炉" 英文翻译 :    crystal pulling furnace; crystalpulling furnace; pulling furnace
• "拉晶轴" 英文翻译 :    drawing axis of crystal
• "艾萨拉晶体" 英文翻译 :    azsharite formation
• "垂直拉晶机" 英文翻译 :    vertical crystal puller
• "磁力拉晶法" 英文翻译 :    magnetic puller technique
• "多段拉晶法" 英文翻译 :    multi pulling method
• "法直拉晶体" 英文翻译 :    cz
• "控形拉晶" 英文翻译 :    shape-controlled crystal pulling
• "拉晶操作" 英文翻译 :    pulling operation
• "拉晶方向" 英文翻译 :    draw direction
• "拉晶工艺" 英文翻译 :    crystal pulling technique
• "拉晶速度" 英文翻译 :    pull rate; pulling rate; pulling speed
• "拉晶速率" 英文翻译 :    crystal pulling speed; drawing rate; pulling rate
• "上拉晶体管" 英文翻译 :    pull up transistor
• "竖直拉晶器" 英文翻译 :    vertical crystal puller
• "下拉晶体管" 英文翻译 :    pull down transistor
• "垂直拉晶技术" 英文翻译 :    vertical pulling technique
• "基座拉晶技术" 英文翻译 :    pedestal technique
• "拉晶升降机构" 英文翻译 :    crystal lift mechanism
• "水平拉晶技术" 英文翻译 :    horizontal pulling technique
• "拉茎钩" 英文翻译 :    stalk hooks
• "拉近职层的原则" 英文翻译 :    princpio da aproximao por nveis

• The growth rate can exceed the pull rate and even be negative at a given time .
  生长速率可能大于拉晶速率，甚至某一时刻是负值。
• Crystal pulling technique
  拉晶工艺
• The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment , ic technics and pulling monocrystal in nitrogen
  在硅片的热处理、集成电路工艺和氮气保护的拉晶过程中，都涉及到硅的氮化问题，因此硅片氮气直接氮化的研究意义重大。
• It is a business unit of the saint - gobain group that supplies a wide range of industries with high quality quartz materials and products , from ingots and blanks which are subsequently machined to make semiconductor equipment parts , to ultimate purity synthetic silica spectrosil
  公司的主要产品是半导体行业生产晶片第一步拉晶时使用的石英坩埚。同时公司每年还生产和销售300吨其他各种石英产品，用于玻璃和金属行业。
• Because of the large stuff of silicon , complex structure of furnace and expensive cost , computer simulation is a best way to optimize design . in order to study the new heat system , we have calculated the heat zone of 200mm solar cell czsi growth
  由于拉晶过程中投料量较大，炉体结构复杂、造价昂贵，所以计算机数值模拟对于优化单晶炉设计是一种重要的工具。本论文用有限元方法对改造后单晶炉的适合的热场进行了数值模拟。
• In this paper , germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer , sims , sem - edx , and the effective segregation coefficent of germanium under the situation of the changed speed was calculated , the result was 0 . 62 . according to the result , the curves of different ge concentrations were got
  本论文利用二次离子质谱( sims ) 、化学分析法(电感耦合等离子体( icp )直读光谱仪) 、扫描电镜能谱仪( sem - edx )三种方法对不同掺锗浓度的czsige单晶中锗含量进行了测试，并对变速拉晶条件下锗的有效分凝系数进行了计算，得出锗的有效分凝系数( ke )为0 . 62 。
• Tera xtal s release of 4 - inch product is well timed to meet the higher market demand stemmed from the wide - adoption of cellular phones in the developed and developing countries . with guidance from prof . yu huang of national tsing hua university s crystal growth laboratory , the crystal growth team at tera xtal first gained invaluable experience over the past 8 months by using the garage - version of a crystal puller in countless test growth trials of 3 " lithium tantalate crystals
  透过清华大学材料科学中心单晶成长实验室负责人黄瑜教授与日本、中国大陆两地长晶专家的交流与指导；兆晶科技的长晶团队采用自制的长晶实验机台，经过无数次三英寸钽酸锂拉晶试验与设计改善，委由国外厂商改造制式量产机台费时六个月为兆晶科技制作出第一台四英寸单晶炉。