抛光液的英文

• liquid polishing agent
• polishing fluid
• polishing solution

• "抛光"英文翻译    polishing; burnishing; buffi ...
• "液"英文翻译    liquid; fluid; juice
• "硅片抛光液" 英文翻译 :    silicon slice polishing liquid
• "电镀中间抛光液" 英文翻译 :    eridite
• "埃里德特中间抛光液" 英文翻译 :    eridite
• "双模具翻转抛光液压机" 英文翻译 :    double-die-turning finishing hydraulic press
• "感光液" 英文翻译 :    liquid photoimagablee; liquid, photo-imagable; photo-imagable liquid
• "滤光液" 英文翻译 :    filter liquor
• "丝光液" 英文翻译 :    mercerizing liquor
• "抛光" 英文翻译 :    [机械工程] polishing; burnishing; buffing; chasing 抛光零件 polish parts; 抛光机 glazing machine; polisher; polishing machine; 抛光剂 brightener; polishing agent (光学零件加工); polishing compound; (brilliant) polish; politure; 抛光轮 buff [polishing] wheel; 抛光装置 buffing attachment
• "蛋白感光液" 英文翻译 :    albumen coating solution
• "电解热光液" 英文翻译 :    solution for electrolytic polishing
• "激光液晶" 英文翻译 :    laser-activated liquid crystal cells
• "即涂感光液" 英文翻译 :    wipe-on coating solution
• "丝光液成分" 英文翻译 :    mercerizing composition
• "阳像感光液" 英文翻译 :    positive sensitizer
• "荧光液检裂法" 英文翻译 :    hyglo
• "阿拉伯树胶感光液" 英文翻译 :    bichromated-albumin process
• "激光液体流量计" 英文翻译 :    laser liquid flowmeter
• "荧光液渗透检验" 英文翻译 :    fluid penetrant test
• "荧光液体渗透剂" 英文翻译 :    fluorescent liquid penetrant
• "边抛光" 英文翻译 :    edge polishing
• "打磨；抛光" 英文翻译 :    polish
• "电抛光" 英文翻译 :    electrolytic brightening; electropolishing; electropolshing
• "火抛光" 英文翻译 :    fire polishing

• Corrosive effect of slurry inhibitor on copper wafer
  抛光液中缓蚀剂对铜硅片的影响
• Passivation and abrasion of copper in hac - koh - kcio3 slurry
  3抛光液中铜的钝化与磨损研究
• Corrosion and passivation of copper in the cmp slurry of ch3nh2 - k3 fe
  铁氰化钾化学机械抛光液中的腐蚀与钝化
• Study on the mechanism about formation of passive film on copper in ch3 nh2 - k3 fe
  铁氰化钾抛光液中铜钝化成膜的机理研究
• What does advanced unigrit technology mean and what does it have to do with m86 cut & polish cream
  什么是先进的无砂粒技术和它为什么与m86切割&抛光液一起使用
• The experimental results indicate that for litao3 the oxidizers are naclo and h2o2 , the stabilizator is koh and the most suitable ph value is 10
  寻找有效的氧化剂及其合适的浓度，确定合理的稳定剂及抛光液的适当ph值。
• Based on the orthogonal experiment , the effect of some control factors , such as concentration of individual component , temperature and operation - times on the quality of polished copper and its alloy are discussed
  在此基础上讨论了抛光液各组分浓度、抛光温度以及抛光次数对抛光效果的影响。
• To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum
  采用化学腐蚀实验方法研究抛光液中氧化剂种类和浓度以及抛光液ph值对钽酸锂晶片化学去除的影响。
• The cmp experiment was carried out systematically on litao3 wafer . the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition , pressure , rotating speed of the polishing plate , the type and size of abrasive , and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details
  通过对钽酸锂晶片的化学机械抛光过程的实验研究，通过测量钽酸锂晶片在不同抛光条件下的表面粗糙度和材料去除率，详细分析了抛光垫材料和状态、抛光压力、抛光盘转速、磨料种类及粒度、抛光液组成等几个因素对抛光表面质量和材料去除率的影响规律。
• The polishing technology of ccos is studied by a series of experiments . the effect of polishing process parameters on the removal efficiency and the stability of the removal function are studied , which include the polishing compound , the density of the polishing fluid , ph of the polishing fluid , the polishing velocity , the polishing pressure and so on . finally , a suit of effective process parameters are given and better experimental result are obtain
  在大量工艺实验的基础上,揭示了抛光剂种类、抛光液的供给量、抛光液浓度、抛光液的酸度值( ph值) 、抛光速度、抛光压力、抛光模材料、抛光模直径及胶层厚度等对抛光效率和去除函数稳定性的影响规律;最后,总结了一套抛光工艺,利用该工艺进行的抛光精度收敛性实验达到了较好的效果。