技术,工艺的英文
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"技术,工艺"怎么读用"技术,工艺"造句
英文翻译手机版
- technology
- "技术"英文翻译 technology; skill; technique ...
- "工艺"英文翻译 technology; craft; industria ...
- "工艺,工艺学技术" 英文翻译 : technology
- "工程;设计;技术;工艺" 英文翻译 : engineering
- "工艺的;技术的" 英文翻译 : technological
- "工艺技术" 英文翻译 : process engineering; process technology; verfahrenstechnik
- "技术[工艺]分析。" 英文翻译 : technical analysis
- "技术;工艺学" 英文翻译 : technology
- "技术工艺品" 英文翻译 : technological craft
- "电子工艺技术" 英文翻译 : electronics process technology
- "仿金工艺技术" 英文翻译 : gold-imitation proce ing technology; gold-imitation processing technology
- "工艺分析技术" 英文翻译 : process analytical technology
- "技术的工艺的" 英文翻译 : techincal
- "技术工艺新闻" 英文翻译 : tyehnik tyehnologiyn medee; tyehnik, tyehnologiyn medee
- "技术工艺因素" 英文翻译 : technological factor
- "技术工艺知识" 英文翻译 : technical know-how
- "位片工艺技术" 英文翻译 : bit slice technology
- "新技术新工艺" 英文翻译 : new technology & new process
- "钻井工艺技术" 英文翻译 : drilling technology
- "最新工艺技术" 英文翻译 : later technology
- "工艺发展, 技术开发" 英文翻译 : technological development
- "工艺革新, 技术革新" 英文翻译 : technological innovation
- "工艺技术博物馆" 英文翻译 : les musées techniques
- "工艺技术熟练工人" 英文翻译 : technologically skilled manpower
- "工艺技术员(电子行业)" 英文翻译 : electronic - technician
例句与用法
- To handle the process problems in production
解决日常生产过程中出现的技术,工艺问题 - At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
在平面工艺初期,由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配, sio _ 2对其又有良好的掩蔽作用,早被选为npn硅平面器件的理想基区扩散源,但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ,扩散系数小, b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布,导致器件不能满足高反压的要求,随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺,前者会引起较大的基区偏差,杂质在硅内存在突变区域,导致放大系数分散严重,下降时间t _ f值较高,热稳定性差;后者需要难度较大的真空封管技术,工艺重复性差,报废率高,在扩散质量、生产效率诸方面均不能令人满意。
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