悬挂键的英文

• dangling bonds

• "悬挂"英文翻译    hang; fly; pend; suspend; sw ...
• "键"英文翻译    key
• "架下悬挂键式犁" 英文翻译 :    underslung alternate plough; underslung alternate plow
• "悬挂键式双向铧式犁" 英文翻译 :    alternate type mounted reversible moldboard plough; alternate type mounted reversible moldboard plow
• "悬挂" 英文翻译 :    1.(挂着) hang; fly; pend; suspend; swing 悬挂在墙上 hang on the wall; 那船悬挂着英国旗。 the ship was flying the british flag.2.[汽车] suspension 前悬挂 front suspension; 悬挂犁 [农业] mounted plough
• "侧悬挂" 英文翻译 :    side mounting
• "非悬挂" 英文翻译 :    unsprung weight
• "后悬挂" 英文翻译 :    rear suspension
• "可悬挂" 英文翻译 :    suspensibility
• "前悬挂" 英文翻译 :    forward mounting; front suspension
• "悬挂,吊" 英文翻译 :    suspend
• "悬挂，中止" 英文翻译 :    suspend
• "悬挂棒" 英文翻译 :    hanger rod
• "悬挂臂" 英文翻译 :    fork arm; suspension arm
• "悬挂椿" 英文翻译 :    suspension peg
• "悬挂的" 英文翻译 :    hanging; impendent; impending; pe ile; pendant; pensile; suspended; underslung
• "悬挂点" 英文翻译 :    fulcrum of su e ion; fulcrum of suspension; hitch point; pendant fixture; pendant point; point of suspension; su e ion point; suspension point; terminal vertex
• "悬挂舵" 英文翻译 :    hanging rudder
• "悬挂法" 英文翻译 :    test method for flame resistance of pressure-sensitive adhesive tapes
• "悬挂杆" 英文翻译 :    loop
• "悬挂架" 英文翻译 :    hanger; headstock; suspension bracket
• "悬挂犁" 英文翻译 :    unit plow
• "悬挂轮" 英文翻译 :    suspension sheave
• "悬挂幕" 英文翻译 :    drape
• "悬挂器" 英文翻译 :    hanger

• Alternate type mounted reversible moldboard plough
  悬挂键式双向铧式犁
• But there are a lot of defects ( dangling band ) in amorphous silicon , therefore its application have been limited
  但是由于它含有大量的缺陷态(主要缺陷态是悬挂键) ，使其在实际应用方面受到了约束。
• Dangling bonds exist at the surface of porous silicon , which leads to the drop of the light - emitting efficiency . to apply porous silicon into practice , surface modification is necessary
  多孔硅表面存在大量的悬挂键，容易引起发光效率的降低，行之有效的克服方法是进行表面修饰。
• This decrease in the defect pl intensity is probably caused by the increase of the nonradiative tunneling transition with multiphonon emission because of the increase in the density of si dbs
  缺陷pl强度的减小可能是因为随着sidbs密度的增加，与多声子有关的，从导带到悬挂键的非辐射通道迁移的增加而引起的。
• We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation . in general , hydrogenation is prepared after completing of tft , in this way , we need more radio frequency power and time , so the cost of hydrogenation will raise
  而通过氢化可以大大降低多晶硅薄膜晶粒边界中的悬挂键和界面陷阱,从而显著提高tft的场效应迁移率和开态电流,减少关态电流,提高tft的电学性能。
• At the same time , we experimented by varying substrate temperature , and found that high substrate temperature is favorable to hydrogen elimination and thus improve the structure of films , but over high substrate temperature leads to the increase of dangling bonds
  同时，我们研究了衬底温度对a - si ： h结构的影响，发现高衬底温度有利于沉积过程中的释氢反应，从而改善薄膜的结构，但过高的衬底温度将导致悬挂键的增多。
• In each case , we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively , the number of the surface states is determined , and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed
  根据电子数目规则，我们断定处在一o . lev ~ 0 . lev的表面态为全部填满的阴离子悬挂键态或者为原子再构后引起的as一asdimer键态，而处在1 . 4ev一1 . 6ev的表面态为阳离子空的悬挂键态。
• The photoelectric property of a - si : h films is closely associated with hydrogen content in films . on the one hand , hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films , and on the other hand , hydrogen incorporated as polyhydride ( si - h2 , si - h3 , ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
  A - si ： h薄膜的光电特性同膜中的氢存在密切关系，一方面，氢以单氢化合物( si - h )方式结合到膜中，从而饱和了膜中的悬挂键；另一方面，氢以多氢化合物( si - h2 、 si - h3和( si - h2 ) n )方式结合到膜中，反而在膜中引入了缺陷，使带隙中的局域态密度增大。

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