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带模型的英文

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  • band model

例句与用法

  • Tape helix model of helical slow - wave structures with vane - loaded
    翼片加载螺旋线慢波结构的螺旋带模型
  • The temperature cracks are calculated by use of a crack band model , and the stress and cracking of the concrete wall are computed by using the half - analytical iteration method
    采用裂缝带模型计算温度裂缝,用半解析迭代法进行了混凝土墙的温度应力和开裂计算。
  • We process calculations as the following : we calculate the binding energies of excitons in a square quantum - well wire in presence of a magnetic field for finite and infinite potential barrier case respectively
    A . balandin和s . bandyopadhyay也是利用变分法,采用二能带模型计算了在外加磁场时的量子线中激子的基态束缚能。
  • There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ) . they are band anti - crossing model , gaas conduction band mixing model and impurity band model
    关于ganas的导带带边的物理本质,目前主要有三种争论较激烈的观点,它们分别是能带反交叉模型, gaas导带混合模型,杂质带模型
  • We build the baseband model of the ar self - encoded spread spectrum system both for a user and multi - user , and do a lot of simulation for the system . in addition , we discuss the performance deeply based on the simulation
    本文建立了单用户及多用户的ar自编码扩频系统的基带模型,并在仿真结果的基础上,对该系统的性能进行了更深入的讨论。
  • The heat transfer and the restriction circumstance are simulated . the temper ature - time curve and the stress - time curve are obtained . because the later joint - filled slots are restrained strongly , in which the thermal stress is great , especially in the corner , in spite of a little temperature rise , some measures should be taken to prevent them from producing cracks
    利用有限元前处理软件vizicad建立了“ t ”形后浇带模型,模拟了后浇带的“热环境”和“约束环境” ,计算得到了后浇带的应力和温度发展曲线,发现虽然后浇带的温升不大,但受到的约束较大,因此产生较大的温度应力,特别是在其拐角处,应采取措施防止裂缝的出现。
  • Firstly , i provide a brief review of the previous achievements and investigations on the low - dimensional quantum devices and semiconductor superlattice , in which some principal theories such as bloch oscillations , wannier - stark ladder , zener tunneling and related progress in experiments are introduced
    首先综述了过去三十年低维量子器件与半导体超晶格的发展与相关研究,介绍了bloch振荡、 wannier - stark台阶、 zener隧穿等关键理论以及相关实验方面的进展,并引入简化模型:紧束缚模型与单带模型
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