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工作波长的英文

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"工作波长"怎么读用"工作波长"造句

英文翻译手机手机版

  • operating wavelength
  • working wavelength

例句与用法

  • For the reason above , regular optical phased array is used only when the size of the modulation unit is smaller than half of the size of the working wavelength
    所以通常规则光学相控阵只用于调制单元的尺寸小于工作波长的一半的情况。
  • In such dense wavelength division multiplexing ( dwdm ) systems a light source having narrower linewidth and further stability of the wavelength has become a requirement
    在这样的密集波分复用( dwdm )系统中,光发送机的工作波长必须稳定,线宽必须窄,以避免复用信道间信号相互窜扰。
  • The experiment proved the adjustments is effective . according to the fact that the structure of the film causes the wavelength shift , we prepared the shift - free polarizers at 1054nrn with plasma - iad
    根据膜层的柱状多晶结构是引起工作波长漂移的主要因素,利用等离子体辅助沉积制备出了中心波长为1054nm的无漂移偏振膜。
  • In this dissertation , the boa device with high extinction - ration , low drive - voltage , high - speed switch and insensitive to wide range of light wavelength , has been developed on double - heterostructure gaas / gaaias
    本研究就是在gaas gaalas双异质结材料上设计高消光比,低驱动电压,高速度,较宽范围工作波长不敏感的高性能boa光开关。
  • A technique , based on maximizing signal to noise ratio ( snr ) of the system , has been proposed . this method includes the determination of optimum wavelength of the laser and avalanche gain of the avalanche photodiode ( apd )
    ( 3 )从分布式光纤温度传感系统的实际设计出发,选取了激光器最佳工作波长,对apd的最佳雪崩增益特性进行分析,得到了使系统信噪比最大的设计结果。
  • In this paper , we mainly discuss multilayer mirrors for x - ray solar telescope operating at 17 . 1nm wavelength . the diameter of primary mirror for telescope is 130 millimeters and secondary mirror is 66mm . especially , we will engage in controllation of uniformity of period thickness
    本文主要针对工作波长为17 . 1nm的x射线空间望远镜中的主镜与次镜的膜厚分布均匀性进行控制,其中主镜直径为130mm ,曲率半径为7 . 5m 。
  • We derive the relationship between verdet constant of magneto - optic glass and operating wavelength by the dispersion theory of verdet constant . zf1 and zf6 magneto - optic glass are experimentalized to testify the relationship . the experimental results are in agreement with the theory
    对zf1 、 zf6磁光玻璃费尔德常数的色散特性进行了理论分析,得出磁光玻璃费尔德常数与工作波长的关系,并进行了实验验证,实验结果和理论符合得较好。
  • In the first part , the basic knowledge of particle scattering in meteorology and physics was introduced . the particles to be discussed include aerosol particles , fog droplets and raindrops and the em wave band in the discussion is near - infrared . in the second part , the mie theory was briefly reviewed and was applied to investigate the scattering characteristics of spherical atmospheric particles , the result shows that in the visibility measurement meter using forward - scattering method , when the working wavelegth is between 0 . 8 m ~ 2 m , the scattering angle is between 25 ~ 40 , the distinguishability and the relative scattering intensity would be better than those under other conditions . in the third part , the superellipsoid was used to describe a wide range of shapes such as spheres . ellipsoids and cylinders . an improved t - matrix method which can be used to calculate arbitry shaped particle ' s scattering field was introduced , and the scattering characteristics of non - spherical atmospheric particles was investigated with this method
    计算结果表明,从相对散射强度、同一方向上不同粒子散射的可区分程度来看,在散射式能见度探测仪器中,工作波长介于0 . 86 m 2 m ,探测角度选取前向25度40度时,探测的结果将会是比较理想的。第三部分中,使用超椭球方程来统一描述各种非球形粒子的形状,然后使用t矩阵方法计算了一些形状的非球形粒子的近红外散射特性。另外,在本文中还针对球形粒子的散射场提供了一种三维可视化方法,使对散射场强度的空间分布的理解更加简单,直观。
  • The short - baseline interferometer ’ s angle measurement accuracy is influenced by phase difference measuring accuracy , the base length measuring accuracy , the system operating wavelength ( frequency ) and so on , the article analyzes the existing theory , and emphatically analyzes the influence of base length measuring accuracy to the precision of angle measurement
    短基线干涉仪测角精度受相位差测量精度、基线长度测量精度、系统工作波长(频率)测量精度等因素的影响,文中,在对原有理论进行分析的基础上着重分析了基线长度测量精度对系统角度测量精度的影响。
  • Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century . this technology builds on conventional optical lithography experience and infrastructure , uses 11 - to 14 - nm photon illumination , and is expected to support multiple technology generation from 65 nm to 35 nm
    极紫外投影光刻( euvl , extremeultravioletlithography )技术作为下一代光刻技术中最佳候选技术,建立于可见/紫外光学光刻的诸多关键单元技术基础之上,工作波长为11 14nm ,适用于制造特征尺寸为65 35nm的数代超大规模集成电路,预计在2006年将成为主流光刻技术。
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