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峰值温度的英文

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"峰值温度"怎么读用"峰值温度"造句

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  • peak temperature

例句与用法

  • Efd recommends a peak temperature of 20 - 400c above the liquidus temperature of the alloy in use
    Efd建议峰值温度为合金熔点温度再加上20 - 400c 。
  • The power is more high and the speed is more slow , the peak of temperature on same point is more high
    激光功率越高、焊接速度越慢,同一测量点峰值温度越高。
  • The peak of temperature is more high with metal powder , as a result of absorptivity is more high
    添加金属粉末时,材料表面对激光的吸收率增强,同一测量点的峰值温度升高。
  • The peak of temperature of thinner base metal is more high than thick base metal , the time of attaining peak temperature is shorter than thick base metal
    同一测量点薄板的峰值温度比厚板高,达到峰值温度的时间比厚板短。
  • In the five key factors of solder ball alloy , solder paste alloy , peak temperature , the time above liquidus and soldering environment , the fore four factors are more important than soldering environment to the solder joints reliability
    在焊球合金、焊料合金、峰值温度、液相线以上时间和焊接环境五个关键因素中,前四项对焊点可靠性比较重要,焊接环境对焊点可靠性的影响不很显著。
  • Determined by dsc . whereafter , the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ) , and the difference of morphology between the two sides is observed . it has been shown that , in the growing surface of sputtered tini film , the trend of grain to accumulating along the normal direction like a column is clearly observed , and the grain is very loose which resulted in more microcavities , but in the surface facing to glass substrate , grain is so compact that there are hardly microcavities
    通过溅射法,在玻璃衬底上淀积了tini薄膜,并在600进行了真空退火, dsc法测得其马氏体逆相变峰值温度为75 ,利用原子力显微镜,对玻璃基tini形状记忆合金薄膜的衬底面与生长面进行了表面微观形貌分析,发现:生长面晶粒呈现出沿薄膜法线方向柱状堆积的趋势,晶粒致密性差,微孔洞多;而衬底面晶粒致密,几乎没有微孔洞存在。
  • In succession , tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering , and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber . in addition , the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ) , and the ti content in the film is approximately 51at %
    按照改进的工艺参数,在单晶硅衬底上溅射-淀积了tini薄膜,并进行了超高真空退火, dsc法测得其马氏体逆相变峰值温度为72 ,利用能谱分析( eds )技术测得其ti含量约为51at ,通过对非晶tini薄膜与单晶硅衬底之间的界面进行eds及x射线衍射( xrd )分析,发现在用大功率( 2000w )直流磁控溅射法制备tini薄膜过程中,存在ti 、 ni与si的双向扩散,发生了界面反应,并有三元化合物ni _ 3ti _ 2si生成。
  • By differential scanning calorimetry ( dsc ) , respectively . without any supplementary method , a ti - rich alloy target ( ti - 48at % ni ) were used to enrich ti content in films during sputtering . as the first step , tini thin film is deposited on a glass substrate by sputtering , and annealed at 600
    采用丝材冷轧法,制备了75 m 、 90 m两种厚度的tini形状记忆薄膜,示差扫描量热( dsc )法测得其马氏体逆相变峰值温度分别为35 、 109 ,在溅射工艺中,采用富ti的tini合金靶( ti - 48at ni )而不是其它成分补偿措施,来增加tini薄膜中的ti含量。
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