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寄生参数的英文

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"寄生参数"怎么读用"寄生参数"造句

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  • parasitic parameter

例句与用法

  • Image method used for coplanar interconnects dependent parameter calculation
    用镜像电荷法求取共面互连线寄生参数
  • The problem in high speed signal process , such as parasitic parameter and gate delay is also the difficulty hi the research
    生成高速,稳定的时钟信号是本课题的目标。高速信号处理所遇到的常见问题,如寄生参数,门电路延迟是设计难点。
  • Design flow of analog circuit begins with drawing schematic and includes simulation , layout , drc / lvs check , parasitic extraction and post - simulation
    模拟电路从schematic开始,其设计流程包括:仿真,版图绘制, drc lvs检查,寄生参数提取和后仿真。
  • The macromodel is built up with the combination of device simulation and nonlinear curve fit , which makes the extraction of the substrate parasitic parameters more convenient and the circuit simulation more accurate
    该宏模型通过器件模拟与非线性拟合相结合的方法建立,使衬底寄生参数的提取更加方便,同时保障了深亚微米电路特性的模拟精度。
  • The mixed - signal flow should realize the communication between the digital circuit and analog one . it includes mixed - signal simulation , integration of the layout of digital and analog circuit , parasitic extraction and post - simulation
    数模混合的设计流程要实现数模电路之间的信号通讯,它的主要流程包括:数字模拟电路的混合仿真,数字模拟电路版图的整合和数字模拟电路提取寄生参数后的仿真。
  • These rules are based on the extraction of all parasitic parameters of the layout and device modeling , including transition behavior , high frequency characteristics of the different materials , and electrostatic couplings to printed circuit board ( pcb ) conductors and to the ground
    这些规则是基于抽取pcb的敷线和器件模型的所有寄生参数而建立的,寄生参数的抽取考虑到了瞬态行为,不同材料的高频特性, pcb不同导体和各导体对地间的静电耦合。
  • With soft - switching technology , inverter spot - welding power source has lower switching dissipation , lower electromagnetic interference and lower sensitivity to parasitic parameters of power circuit , contribute to inverter output characteristics and circuit efficiency , stability and reliability
    采用软开关技术的点焊逆变电源,可减小开关损耗、电磁干扰及对电路寄生参数的敏感性,并从根本上改善电路的输出特性,提高电路的效率、稳定性和可靠性。
  • The factors limiting the frequency band of the wide - band amplifier are introduced . through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics , a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit , current pattern circuit and frequency characteristics are analyzed . according to the linear theory of transconductance which is applied in the bit circuit , the current pattern amplifier circuit , current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
    介绍了限制宽带放大器频带宽度的因素,通过分析mosfet的本征参数、寄生参数对频率特性的影响,提出了采用短沟器件、使mosfet工作在饱和区、抬高栅源电压等提高mosfet特征频率的方法;分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响,根据应用于双极晶体管电路的跨导线性原理,提出了采用mosfet构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器,获得了良好的频率响应。
  • To make use of parasitic parameter to design the circuit : because parasitic inductance induced by packaging could not only influence the circuit characteristics , but also lead to a design failure , the inductor value needed in the circuit can be designed in the amplifier according to the size of parasitic inductance
    4 、利用寄生参数来设计电路。由于电路的封装存在寄生电感,其不仅会影响电路的特性,而且可能造成电路设计工作的失败,所以根据电路所需电感及其值的大小,将之有效的设计在放大器电路中。
  • Theoretically several solutions are derived in the final scheme such as broadband matching technology which included negative - feedback technology , traveling wave technology and balance technology . in addition , the design will be optimized by eda software and the final test result indicates that our design is successful . the principle of microwave amplifier is introduced at first in this paper , especially its main parameters index sign , then the material performance and the influence of parasic parameter and model setting of the gaas phemt is discussed
    文中首先介绍宽频带放大器的主要参数指标,接着介绍了gaasfet的材料特性,以及phemt管芯寄生参数对实际放大器设计的影响,然后讨论gaasphemt的大、小信号模型的建立与分类;结合gaasphemt模型和s端口参数分析了宽频带匹配技术的原理;最后论述本课题中各个放大器实现的具体方案,以及在放大器实现过程中应该注意的问题,给出了实际宽带放大器的测试结果,并将软件仿真结果与实测曲线进行对比。
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