外发光的英文

• outer glow
• outerglows

• "外"英文翻译    outside; external side
• "发光"英文翻译    give out light; shine; be lu ...
• "红外发光器" 英文翻译 :    infrared illuminator
• "红外发光图片" 英文翻译 :    infrared luminescence photography
• "砷化镓红外发光晶体管" 英文翻译 :    gallium arsenide ultrared lighting transistor
• "发光" 英文翻译 :    1.(发出光来) give out light; shine; be luminous; brighten; fulgurate; flash; glow; sparkle; glisten; gleam; shimmer; radiate; lightening; radiation; shining; glowing; inflammation 有一分热, 发一分光 give as much light as the heat can produce; do one's best, however little it may be; 露珠在晨光下闪闪发光。 dewdrops sparkle [glisten] in the morning sun. 群星闪闪发光。 the stars twinkled.2.[物理学] luminescence 场致发光 electroluminescence
• "外发厂" 英文翻译 :    sub-contractor
• "外发工" 英文翻译 :    outworker
• "外发区" 英文翻译 :    shipping area
• "船外发动机" 英文翻译 :    outboard engine
• "带外发射" 英文翻译 :    broadband emission; out of band emi ion; out of band emission; out-of-band emi ion; out-of-band emission
• "带外发现" 英文翻译 :    out-band discovery
• "带外发信" 英文翻译 :    out of band signaling; out-of-band signaling; out-of-band signalling
• "额外发病率" 英文翻译 :    extra incidence rate
• "额外发行" 英文翻译 :    excess issue; extra limit issue
• "发外发癣菌" 英文翻译 :    ectothrix
• "发文, 外发函件" 英文翻译 :    outgoing mail
• "国外发单" 英文翻译 :    foreign invoice
• "海外发布" 英文翻译 :    promotion in overseas markets
• "海外发行人" 英文翻译 :    overseas issuer
• "海外发展" 英文翻译 :    overseas development
• "海外发展部" 英文翻译 :    ministry of overseas development
• "红外发散" 英文翻译 :    infrared divergence
• "红外发射" 英文翻译 :    infrared emission
• "红外发射管" 英文翻译 :    high power ir

• Comparison of ultraviolet photoluminescence characteristics between mgzno and zno thin films
  晶体薄膜紫外发光特性比较
• X - ray diffraction ( xrd ) , transmission and absorption spectroscopy and photoluminescence spectroscopy were employed to study the optical properties of zno films and nano - particles
  并对氧化锌的紫外发光和缺陷引起的可见光发射的强度变化进行了分析。
• With increasing the inputting rf power further , the intensity of visible band emission increase , on the contrary , the intensity of uv band decreas . the surface also becomes rough as further increasing rf power
  然而随着射频功率的进一步增加，薄膜的结晶质量降低，紫外发光变弱，深缺陷发光增强，薄膜的表面平整度变差。
• The results showed that both the absorption edge and the pl peak blue - shifted with a decrease of thickness of the films , and that pl intensity and line - width were increased for the films with a smaller thickness
  结果发现,在一定薄膜厚度范围内,紫外发光带和光学吸收边均随着薄膜厚度的减小而单调蓝移,且紫外发光强度递增,峰宽变大。
• Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
  Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。
• Investigations are made of porous sic ( psc ) , both as a potentially attractive material for fabricating uv light emitting diodes ( leds ) , efficient photodetectors and hydrocarbon gas sensors , and as a novel substrate for epitaxy , chiefly because of its much higher photoluminescence ( pl ) emission efficiency than that from bulk sic
  作为一种有潜在吸引力的材料，多孔sic ( psc )可以用来制备紫外发光二极管、灵敏光探测器、碳氢气体探测器和新颖的外延材料，目前被广泛研究。引起大家感兴趣的一个原因就是psc比晶体sic有更高的发光强度。
• The photoluminescence of the thin films without post heating is weak . only one luminescence band is found nearby 473nm . two luminescence bands are found after post heating , nearby 493nm and 368nm respectively . the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase
  而退火处理过后，薄膜出现两种光致发光现象，即蓝色发光和紫外发光，其峰值分别在493nm和368nm附近，而且随着退火温度的升高和退火时间的延长，发光谱带的强度逐渐增大，峰形的位置也有不明显的蓝移。
• This part emphasizes the synthesis of nanoarrays , aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size , length and chemical structure of the organic molecules ; 2 . this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder , aiming at size controls , coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost , large scale production ; 3 . according to development in zno nanomaterials , we first report on the synthesis , characterization of amorphous zno , aiming at describing the principles and approaches of synthesis techniques , optical properties , spatial structure and doped effect ; the amorphous zno displays cage - like structure , showing a strong ultraviolet emission while the visible emission is nearly fully quenched , a potential uv - emission material ; 4
  本论文以量子结构自组装为出发点，提出利用杯芳烃及其衍生物的化学受限反应实现尺寸可调半导体纳米粒子自组装；提出有机聚合网络原位组装zns基纳米荧光粉方法，把荧光粉的纳米化、包敷、防团聚在“一锅”反应中完成，适于低成本，批量生产；根据当前zno的研究情况，我们首次合成了非晶zno ，研究了它的光学性质，确定了它的结构，并对其掺杂进行了初步的研究，非晶zno表现出强的深紫外发光特性，而可见发射非常弱，是一种有巨大潜在应用价值的深紫外发光材料；利用非晶zno的亚稳特性，对晶化过程中非晶zno纳米晶zno三维受限量子结构特性，界面特性进行了深入的研究；利用固相热分解一般受扩散控制特性，实现了尺寸可控的zno三维量子结构的自组装；利用非晶zno的高度分散性，容易均匀成膜特性，实现了非晶籽晶诱导低温液相外延自组装生长高取向zno晶体薄膜。
• With the development of science and technology , more and more oxide crystals are synthesized by more and more advanced technique , the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded . corundum dopped with impurity not only is cherished because of it ' s beautiful appearance , but also is used in the fields such as electrotechnics , mechanism , laser , the optic apparatus and the underlay of semiconductor . sapphire dopped with ti3 + is the best material of the tunable solid laser . zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3 . 37ev ) . the excited emission in zno crystal at room temperature has been found , so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
  含有少量杂质的刚玉晶体( - al _ 2o _ 3 )不仅由于其色泽艳丽成为人们珍爱的名贵宝石，而且由于它具有的优异性能，被广泛应用于电工、机械、激光器，光学器件和半导体衬底材料。钛蓝宝石是目前最优异的固体宽带调谐激光材料，用于制作飞秒脉冲可调谐激光器。氧化锌晶体是直接带隙宽禁带半导体材料(禁带宽度3 . 37ev ) ，现已发现具有室温下受激发射特性，有可能实现室温下半导体紫外发光。
• Zno had an intensive uv emissing and a weak deep level emission . the effect of heat treating about uv emissing and deep level emission was different : uv emissing enhanced and deep level emission weakened when the annealing temperature was lower than 450 and it reversed when the annealing temperature was above 450
  热处理对紫外发光和深能级发光的影响不同, 450以下的热处理能够提高紫外发射,抑制深能级发射, 450以上的热处理则会增强深能级的发射,降低紫外发射。