复合效率的英文

• composite efficiency

• "复合"英文翻译    compound; complex; composite ...
• "效率"英文翻译    productiveness; efficiency; ...
• "光合效率" 英文翻译 :    photosynthetic efficiency
• "混合效率" 英文翻译 :    mixing effect; mixing efficiency
• "接合效率" 英文翻译 :    efficiency joint; efficiency of joint; joint efficiency
• "结合效率" 英文翻译 :    joint efficiency
• "联合效率" 英文翻译 :    combined efficiency
• "整合效率" 英文翻译 :    integration efficiency
• "综合效率" 英文翻译 :    all-round efficiency; combined efficiency; efficiency of overall
• "耦合效率" 英文翻译 :    coupling efficiency
• "复合效应" 英文翻译 :    composition effect
• "齿轮啮合效率" 英文翻译 :    gear mesh efficiency
• "光源耦合效率" 英文翻译 :    source coupling efficiency; source-coupling efficiency
• "设备综合效率" 英文翻译 :    facilities comprehensive efficiecy
• "液压偶合效率" 英文翻译 :    hydrauliccoupling efficiency
• "组合效率系数" 英文翻译 :    combinatorial efficiency index
• "布拉格耦合效率" 英文翻译 :    bragg coupling efficiency
• "布喇格耦合效率" 英文翻译 :    bragg coupling efficiency
• "接合效率实效接合" 英文翻译 :    efficiency joint
• "复合效应流量仪表" 英文翻译 :    combined effects meter
• "效率" 英文翻译 :    productiveness; efficiency; productivity; workpiece ratio 效率低 inefficient; 效率高 efficient; 提高效率 promote efficiency; 效率首屈一指 second to none in efficiency; 投资效率 the efficiency of investment; 效率就是生命。 efficiency is life
• "闭合效应" 英文翻译 :    closure effect; effect of closure
• "缔合效应" 英文翻译 :    association effect
• "符合效应" 英文翻译 :    coincidence effect
• "光合效应" 英文翻译 :    photosynthetic effect

• Mqw have the same effect on hb - led as dh , but better than that
  Mqw结构比dh结构更加有效的限制载流子，增加辐射复合效率。
• In addition , it proved that the electric field could control the carrier recombination regions . along with voltage hoisting , the recombination efficiency reached the max before it declines quickly
  另外，电场对器件的复合效率具有较强的调制作用，随着电压的升高，漏电流增大，器件的复合效率达到最大值后很快地下降。
• The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface . the influence of barrier height of transport layer on current density , recombination current and recombination efficiency of the devices is great
  结果表明：双层器件的发光是载流子隧穿内界面后在两有机层中的复合发光，输运层的势垒高度对载流子电流密度、复合电流密度以及器件的复合效率影响很大。
• After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes , the theoretical model of the leds * light - emitting efficiency was presented . based on this model , the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically , we found the calculated results agreed very well with the experimental results under the electric field from 0 . 5 x 106 to 1 . 5 x 106v / cm , the numeral calculations and theoretical analyzes of the light - emitting efficiency were done . the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination , the light - emitting efficiency was affected by many factors
  本文主要研究聚对苯乙炔（ ppv ）薄膜发光二极管发光效率及主要影响因素，简单地介绍了ppv薄膜发光二极管的研究背景及发展趋势、 ppv器件的结构和性质后，提出了一个计算器件发光效率理论模型，利用这个理论模型得出了发光效率公式的表达式：并对注入电流、复合效率等进行了数值计算，通过合理地选择计算参数，发现计算值在场强为0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范围内与实验结果较好地符合，在此基础上，对发光效率进行了数值计算和理论分析，结果表明：计算结果与理论研究结果相符较好，得出结论如下： （ 1 ）本文的理论推导正确地反映了器件中载流子的注入、传输和复合等基本机制； （ 2 ） ppv薄膜中的电致发光是激子复合的结果，发光效率受多种因素影响。
• Bulk silicon has an indirect energy bandage and is therefore highly inefficient as a light source . it is hard to get the goal of luminescence devices . nanocrystalline silion ( nc - si ) have many difference from bulk silicon , such as structure , the capability of optics and photoelectricity
  单晶硅是间接带隙材料,其带间辐射复合效率非常低,难以达到发光器件的要求,与之相比,纳米硅晶在结构、光学及光电性能方面与单晶硅不同,它在发光器件、光探测器件、光电集成以及传感器等领域有更广阔的应用前景。
• Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ) , which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices . as to the doped devices , measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
  研究结果表明， dl - a型双层结构器件ito / npb / alq / mg : ag的各项性能指标明显优于单层器件ito / alq / mg : ag ，因为前者有更好的载流子迁移率匹配以及能带匹配，因此平衡了复合的载流子数目，并且能将复合区有效控制在发光层内部，有效避免了表面的大量缺陷以及电极猝灭效应，提高了载流子的复合效率，从而提高了器件的发光性能。