型掺杂的英文

• n type doping
• type doping p

• "型"英文翻译    mould; model
• "掺杂"英文翻译    mix; mingle doping; inclusio ...
• "n 型掺杂" 英文翻译 :    n type doping
• "p 型掺杂" 英文翻译 :    p type doping
• "p 型掺杂剂" 英文翻译 :    p dopant modifier; p type dopant
• "型掺杂剂" 英文翻译 :    dopant modifier p; type dopant p
• "型掺杂漏极" 英文翻译 :    doped drain p
• "型掺杂源极" 英文翻译 :    doped source p
• "p 型掺杂漏极" 英文翻译 :    p doped drain
• "p 型掺杂源极" 英文翻译 :    p doped source
• "型掺杂的漏极" 英文翻译 :    n doped drain
• "型掺杂的源极" 英文翻译 :    n doped source
• "型掺杂剂原子" 英文翻译 :    n type dopant atom; type dopant atom
• "n 型掺杂的漏极" 英文翻译 :    n doped drain
• "n 型掺杂的源极" 英文翻译 :    n doped source
• "n 型掺杂剂原子" 英文翻译 :    n type dopant atom
• "掺杂" 英文翻译 :    1.mix; mingle2.doping; inclusion; addition; adulteration
• "锥型掺和机" 英文翻译 :    conical blender
• "净掺杂 净掺杂" 英文翻译 :    netdoping
• "搅拌型掺混机" 英文翻译 :    agitator-type blender
• "不掺杂" 英文翻译 :    undope
• "掺加；掺杂" 英文翻译 :    adulteration
• "掺杂,掺假" 英文翻译 :    adulteration
• "掺杂的" 英文翻译 :    adulterated substance; doped; heterogeneous
• "掺杂粉" 英文翻译 :    adulterated flour

• In this work , k was first used as a donor for synthesizing n - type diamond using cvd method
  首次采用cvd技术实现了以钾为施主的金刚石薄膜的n型掺杂。
• In this paper we mainly study preparation , properties and n - type doping of cubic boron nitride thin films
  本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。
• We get the conclusion : the higher the doping density is , the shorter grading length is wanted to make the spike vanish
  并且得出结论： n型掺杂浓度越高，消除尖峰所需的渐变长度越短。
• In this paper we studied the influence of process parameters of depositing cbn films , the n - rype doping of bn films and the properties of p - si / n - bn heterojunctions and gained the results as follows
  本文主要研究工艺参数对制备立方氮化硼的影响，氮化硼的n型掺杂和p - si n - bn异质结特性等内容，得到了如下主要结果。
• 4 . new types of single - layered photoreceptors were prepared based on the above organic composite semiconductors . the best photosensitivity of tiopc / azo composite and o - azo / cnts nanocomposites and cnts - b - tamnpc composite are 0 . 95 , 1 . 11 and 1 . 19 ( lux s ) - 1 , respectively
  5 .设计和制备了新型的有机小分子(四氯苯醒)共升华可控p型掺杂有机光电导材料(酞普镍)体系。
• The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
  6文章还对立方氨化硼薄膜的成核和生长机理，氮化硼薄膜的n型掺杂机制和bn型）侣i …型）异质结的电流输运机制进行了探讨。
• The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type . the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
  本论文的主要内容和结果如下: ( 1 )借用“热中子辐照硅片使部分硅嬗变为磷,从而将硅掺杂成n型”的思想,从质子嬗变角度讨论了实现zno材料的p型掺杂方案。
• In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators . firstly , we presented reseached and development of solar cells in china and foreign countries ; secondly , on the basis of fundamental priciples and theories , we discussed some factors of influcing conversion efficiency of solar cells , and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed , the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied , and some questions on epitaxy growth ( such as crystal qualities , interface stress , element interdiffusion , n - and p - type doping et all ) were solved ; after that , the cell fabrication process was described ; finally , we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma , designed and fixed new solar concentrators
  本文致力于用自制的低压mocvd装置进行cainp _ 2 / gaas / ge空间用高效级联太阳能电池制作的工艺以及聚光太阳能电池组件的研究。首先，介绍了国内外太阳能电池的研究现状及应用情况；其次，运用太阳能电池基本原理讨论影响电池转换效率的因素，分析了级联电池的伏安特性；随后，讨论了cainp _ 2 / gaas / ge双结级联电池的结构设计理念，研究了采用低压mocvd技术生长cainp _ 2 / gaas / ge级联太阳电池材料的工艺过程，解决了异质材料生长的结晶质量、界面应力、材料互扩散以及材料n 、 p型掺杂等一系列问题；然后总结了级联电池的后工艺制作；最后，研究了以pmma为材料的菲涅耳线聚焦透镜的热压成型工艺及其模具的加工工艺，设计并安装完成新型聚光太阳能电池组件。
• It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials , however , for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little . 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas , we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films , and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
  5实现了氮化硼薄膜的n型掺杂，成功制备出bn型）乃…型）异质结并且首次系统研究了其卜v和cv特性我们用射频溅射法溅射六角氨化硼靶，在工作气体氮和氮中混入s ，沉积氮化硼薄膜，以研究氮化硼薄膜的n型掺杂，并得到bnh型）侣i …型）异质结。
• Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools , electronic and optical devices , etc . because c - bn possesses excellent physical and chemical properties , such as ultrahigh hardness only inferior to diamond , inertness against oxidation at high temperature , uneasy reaction with iron group metal , as well as the possibility of using as n - and p - type doped semiconductors
  立方氮化硼( c - bn )具有优异的物理化学性质,如仅次于金刚石的硬度、高温下强的抗氧化能力、不易与铁族金属反应、可n型掺杂也可p型掺杂成为半导体等,立方氮化硼( c - bn )薄膜在切削刀具、电子和光学器件等方面有着潜在的重要应用前景。