变容管的英文

• varactor

• "变"英文翻译    become different; change
• "容"英文翻译    hold; contain
• "管"英文翻译    pipe; tube
• "变容管调谐" 英文翻译 :    varactor tuning
• "变容管倍频链" 英文翻译 :    varactor multiplier chain; varactormultiplierchain
• "变容管倍频器" 英文翻译 :    varactor frequency multiplier; varactor multiplier
• "电荷存储变容管" 英文翻译 :    charge-storage varactor; charge-storagevaractor
• "变容二极管调谐 变容管调谐" 英文翻译 :    varactortuning
• "单变容管参量放大器" 英文翻译 :    single-varactor parametric amplifier
• "变容" 英文翻译 :    transfiguration
• "电容管" 英文翻译 :    capacitance tube
• "压容管" 英文翻译 :    isobaric isosteric tube
• "变容泵" 英文翻译 :    positive-displacement pump
• "变容量" 英文翻译 :    varying capacity
• "变容器" 英文翻译 :    variodenser
• "宽容管理" 英文翻译 :    allowance management
• "内容管理" 英文翻译 :    cms; content management; wcm
• "内容管理器" 英文翻译 :    content explorer; contents supervisor
• "内容管理员" 英文翻译 :    ibmcontentmanageribm
• "血比容管" 英文翻译 :    hematocrit tube; hematocrittube
• "元内容管理" 英文翻译 :    gpower cms
• "脂肪比容管" 英文翻译 :    lipocrit
• "纵容管理" 英文翻译 :    indulgent management
• "变容二极管" 英文翻译 :    autocap; capister; diode varactor; hypercap diode; varactor diode; variable-capacitance diode; varicap diode; variode; vcd vaiabe capacitance diode; vcd variable capacitance diode; volticap
• "变容二极体" 英文翻译 :    varactor diodes

• The vco is optimized according to the targets of low voltage - supply , low power consumption , low phase noise and large tuning range . with a voltage - supply of
  与由反型mos变容管调谐的压控振荡器比较,结果表明积累型变容管调谐的vco具有更好的相位噪声性能。
• The frequency of the pulse is the same as that of the crystal oscillator . the pulses sampled the output of the vco and generate the error signal . the error signal is amplified ,
  误差电压经放大后送入环路滤波器进行滤波和再放大,然后去改变变容管偏置电压,控制振荡器输出频率,达到稳频的目的。
• With the rapid advancement of process and technology , especially the realization of on - chip passive elements such as inductors and varactors , the on - chip implementation of voltage - controlled oscillators ( vcos ) which are necessary in wireless transceivers has become easy
  在工艺技术的飞速进步下,尤其是电感和变容管等无源器件片上实现问题的解决,压控振荡器已经可以实现单片集成,这对降低收发机的成本十分关键。
• Compared with gunn diode , mesfet has the advantage of high efficiency , flexible design and easy to integrate . the two ports negative resistance oscillating network is analyzed and an extremum - line model of microwave transistor oscillating network output impedance is developed
  Mesfet较之gunn二极管在vco电路中有效率高、设计灵活性、便于集成等优点，所以本文着重介绍了变容管调谐微带结构mesfetvco的研制工作。
• First of all , single port negative impedance oscillator is analyzed in the thesis . a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated . the substrate of the vco chip is gaas with dimension of 4 . 4mmx3 . 9mm
  本文首先对单端口负阻振荡器进行了分析，给出了gunn二极管负阻振荡器的设计方法，设计出了一个变容管调谐平面微带gunn二极管vco芯片，该芯片以gaas为衬底，尺寸为4 . 4mm 3 . 9mm 。
• On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range
  3 .由于lc压控振荡器中的pn结变容管品质因数低、调谐范围小,本次设计的lc压控振荡器采用了强反型mos变容管,仿真结果表明,所设计的lc压控振荡器具有15 %调谐范围。
• It also gives the motive of the ka - band vco and mixer , associated with the subject ' s requirement and the realistic conditions , according to which a proposal is confirmed that the gunn diode and the varactor are mounted in the same cavity to fulfill the vco and an antiparallel diode pair is used to fulfill the harmonic mixer . in chapter 2 , based on the basic theory of negative resistance oscillating , we analyses the gunn oscillator and it ’ s tuning character . chapter 3 introduces the theory of millimeter - wave harmonic mixer
  以此为根据结合课题需要和实验室的实际条件,确定vco采用耿氏管腔体振荡器形式,变容管与耿氏管安装在同一个腔内以进一步减小体积,采用反向并联二极管实现谐波混频;第二章介绍负阻振荡器理论及其调谐原理;第三章介绍毫米波谐波混频器基本原理;第四章给出了振荡器及谐波混频器的设计过程,整个组件联调的结果;最后是结束语,分析了电路中存在的问题,指出了改进方向。
• Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail
  研究电感和变容管这两种射频集成无源器件的寄生效应和射频mos晶体管的热噪声模型,提出集成电感的设计原则和优化方法,详细研究了一种新型的积累型mos可变电容,这种积累型mos变容管比一般的反型mos变容管有更高的品质因数。