反应室的英文

• reaction chamber
• reactive cell (chamber)
• reactor

• "反应"英文翻译    neaction
• "室"英文翻译    room
• "反应室清除" 英文翻译 :    chamber cleaning
• "隔板反应室" 英文翻译 :    baffled reaction chamber
• "混合反应室" 英文翻译 :    mixing and reaction chamber
• "裂化反应室" 英文翻译 :    soaker; soaking chamber
• "热核反应室" 英文翻译 :    thermonuclear reaction chamber
• "石英反应室" 英文翻译 :    quartz reaction chamber
• "涡流反应室" 英文翻译 :    whirling reaction chamber
• "隔板式反应室" 英文翻译 :    baffled reaction chamber
• "叶轮式反应室" 英文翻译 :    paddle reaction chamber
• "石油裂化反应室" 英文翻译 :    soaker
• "浸渍槽；浸渍剂；均热炉；裂化反应室" 英文翻译 :    soaker
• "克劳斯裂化设备的反应室" 英文翻译 :    cross reaction chamber
• "克劳斯裂化装置的反应室" 英文翻译 :    cross reaction chamber
• "供应室" 英文翻译 :    supply house; supply room; supply-room
• "万应室" 英文翻译 :    room of requirements
• "弹药接应室" 英文翻译 :    ammunition lobby
• "热水供应室" 英文翻译 :    hot water service room; hot water supply room
• "外科供应室" 英文翻译 :    surgical supply room
• "物料供应室" 英文翻译 :    material management section; material procurement office material supply office
• "中心消毒供应室" 英文翻译 :    central sterile supply department
• "反应" 英文翻译 :    1.(打针或服药所引起的症状) neaction 病人对药物的反应 patient's reaction to a drug2.(化学变化) reaction 放热反应 exothermic reaction;化学反应 chemical reaction; 碱性反应 alkaline reaction; 取代反应 displacement reaction; 酸性反应 acid reaction; 吸热反应 endothermic reaction3.(原子核受外力作用而发生变化) reaction 核反应 nuclear reaction; 热核反应 thermo-nuclear reaction4.(有机体受到刺激而引起的相应活动) reaaction 阳性反应 positive reaction; 阴性反应 negative reaction; 中性反应 neutral reaction; 过敏反应 [医学] allergic reaction5.(事情所引起的意见、态度或行动;反响) response; repercussion; reaction 反应不一。 reactions vary.; vary in reaction; 反应冷淡。 the response was far from warm. 大家对这部影片反应很好。 people responded very favourably to the film. 公众对我们所作出的努力反应极好。 the public has responded magnificently to our efforts. 听众对他的演说立即作出反应。 the audience reacted readily to his speech
• "储藏及仓库中央供应室" 英文翻译 :    central supply center
• "“给”反应,给反应" 英文翻译 :    on-response

• Reaction chamber reactor
  反应室反应器
• Acted by the accelerated electrons , the materials of carbon source were taken the form of plasma in the chamber
  在被加速的电子作用下，碳源物质在反应室中形成等离子体。
• If the invaders can gain access to the reactor room by blowing up the four security terminals , they can blow up the titan
  如果入侵者炸毁四个安全终端，就能进入到反应室，也就能炸毁泰坦。
• All these has provided us with scientific basis for designing the chamber of icp etching system and selecting the appropriate etching samples
  这些结论为设计icp刻蚀系统的反应室、选择合适的刻蚀工艺提供了科学的根据。
• The nitrogen atoms involving in the chemical reaction originated from the working gas and nitrogen gas in the reactive chamber , and the latter is chief
  喷涂过程中参与反应的n元素来自离子气和反应室中的n _ 2气，以后者为主。
• The growth mechanism of the ordered nanowires is discussed . novel 2 - d semiconductor sic nanonetworks have been synthesized at relatively low - temperature via vapor chemical reaction approach in homemade graphite reaction cell
  用简单气相化学反应法，于自制石墨反应室中，在无空间限制和较低温度下，合成出大面积新型二维半导体sic纳米线网。
• The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source . the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen
  采用等离子体辅助化学气相沉积方法，以碳氢化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作为碳源物质，用高纯氢气作为载气，将碳源物质携带进入反应室。
• This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
  利用单探针和双探针诊断30mm高反应室和50mm高反应室在各种工艺条件下的离子密度和电子温度，得到这两个参数在反应室轴向位置的空间分布、随功率和气压的变化曲线、顶盖接地和反应室体积对它们的影响，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，电子温度在4 10ev之间；当顶盖接地时，该处的等离子体密度明显大于不接地；在同样条件下， 50mm高反应室内的离子密度明显大于30mm高反应室。
• Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer , and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d , which was revealed by scanning electron microscope
  发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延gan的晶体质量和光学质量。通过sem分析，发现提高缓冲层生长压力时，高温gan生长明显经历了从三维生长到二维生长的过渡，晶体质量明显提高。
• The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
  对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。

• 反应室的日语：リアクションチャンバ はんのうしつ