反向击穿电压的英文

• breakdown reverse voltage
• reverse breakdown voltage

• "反向"英文翻译    opposite direction; reverse; ...
• "击穿电压"英文翻译    breakdown potential; breakdo ...
• "二极管反向击穿电压" 英文翻译 :    diode reverse breakdown voltage
• "正向击穿电压" 英文翻译 :    forward break down voltage
• "反向击穿" 英文翻译 :    reverse breakdown
• "电击穿电压" 英文翻译 :    electric breakdown voltage
• "击穿电压" 英文翻译 :    bdv breakdown voltage; breakover voltage; breakaway tension; breakaway voltage; breakdown potential; breakdown te ion; bv breakdowm voltage; bv breakdown voltage; discharge voltage; disruptive pressure; disruptive voltage; electric breakdown strength; electrical breakdown tension; flash over voltage; flashover voltage; punch through voltage; puncture voltage; rupturing voltage; shorting voltage; spark potential; sparking potential; sparking voltage; vbo voltage break open; voltage break down; voltage breakdown; voltage, breakdown
• "漏击穿电压" 英文翻译 :    drain breakdown voltage
• "低频击穿电压" 英文翻译 :    low-frequency puncture voltage
• "集极击穿电压" 英文翻译 :    collector breakdown voltage
• "接近击穿电压" 英文翻译 :    asymptotic breakdown voltage
• "介电击穿电压" 英文翻译 :    dielectric breakdown voltage
• "漏极击穿电压" 英文翻译 :    drain breakdown voltage
• "漏源击穿电压" 英文翻译 :    drain source breakdown voltage
• "阳极击穿电压" 英文翻译 :    anode breakdown voltage
• "最低击穿电压" 英文翻译 :    minimum disruptive voltage
• "最小击穿电压" 英文翻译 :    minimum break-down voltage
• "二极管反向击穿" 英文翻译 :    diode reverse breakdown
• "点火电压击穿电压" 英文翻译 :    striking voltage
• "击穿电压强度试验" 英文翻译 :    electrical strenth test
• "击穿电压时间曲线" 英文翻译 :    voltagetime-to breakdown curve
• "击穿电压温度系数" 英文翻译 :    temperature coefficient of breakdown voltage; temperature coefficient of hreakdown voltage
• "集电极击穿电压" 英文翻译 :    collector breakdown voltage
• "漏源极击穿电压" 英文翻译 :    drain source breakdown voltage
• "漏栅极击穿电压" 英文翻译 :    drain gate breakdown voltage

• Measuring methods of photocell - inverse breakdown voltage
  光电池测量方法反向击穿电压
• Breakdown reverse voltage
  反向击穿电压
• A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
  室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压
• High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
  由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。

• 反向击穿电压的日语：ぎゃくほうこうブレークダウンでんあつ ぎゃくたいでんあつ