双极性晶体管的英文

• bipolar junction transistor bjt
• bipolar transistor
• bpt
• transistor, bipolar

• "双极性"英文翻译    bipolarity
• "晶体管"英文翻译    transistor; crystal valve
• "双极晶体管 双极性晶体管" 英文翻译 :    bipolartransistor
• "异质结双极性晶体管" 英文翻译 :    hbt heterojunction bipolar transistor
• "单极性晶体管" 英文翻译 :    unipolar transistor
• "双极性结型晶体管" 英文翻译 :    bipolar junction fransistor
• "非极性晶体" 英文翻译 :    nonpolar crystal
• "极性晶体" 英文翻译 :    polar crystal
• "无极性晶体" 英文翻译 :    nonpolar crystal
• "异极性晶体" 英文翻译 :    heteropolarity
• "有极性晶体" 英文翻译 :    polar crystal
• "互补性晶体管" 英文翻译 :    cttl complementary transistor transistor logic
• "双级性晶体管" 英文翻译 :    bipolar transistor
• "双极晶体管" 英文翻译 :    bipolar junction transistor bjt; bipolar transistor; bipolartransistor
• "极性晶体 铁磁晶体" 英文翻译 :    polarcrystal
• "异极性晶体 反极性 反转极性" 英文翻译 :    reversedpolarity
• "双极性电晶体" 英文翻译 :    transistor bipolar
• "异极性晶体 异性极" 英文翻译 :    oppositepole
• "双极-场化晶体管" 英文翻译 :    bifet
• "双极型晶体管" 英文翻译 :    bipolar junction transistor; bipolar tra istor; bipolar transistor
• "对称双极晶体管" 英文翻译 :    symmetric bipolar transistor
• "高反压双极晶体管" 英文翻译 :    high-voltage power bipolar transistor; high-voltagepowerbipolartransistor
• "高频双极晶体管" 英文翻译 :    high-frequency bipolar transistor
• "合金双极晶体管" 英文翻译 :    alloy bipolar transistor
• "合金型双极晶体管" 英文翻译 :    alloy bipolar transistor

• Small signal bipolars with b - c tied together will also make nice low - leakage diodes
  连接基极-集电极的小信号双极性晶体管也可以作为不错的低漏电流二极管。
• Simulation result shows that nearly 100 % breakdown voltage of the plane junction can be realized
  模拟结果显示，该结构可以使射频功率双极性晶体管的击穿电压几乎100 %达到平行平面结的理想值。
• Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section two : blank detail specification for case - rated bipolar transistors for low - frequency amplification
  半导体器件.分立器件.第7部分:双极性晶体管.第2节:低频放大用的额定环境双极性晶体管的空白详细规范
• Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification
  半导体器件.分立器件.第7部分:双极性晶体管.第1节:低频和高频放大用的额定环境晶体管的空白详细规范
• Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices . simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized
  文摘:提出一种二氧化硅/多晶硅/二氧化硅夹心深槽场限制环新结构来提高晶体管的击穿电压.模拟结果显示,该结构可以使射频功率双极性晶体管的击穿电压几乎100达到平行平面结的理想值
• Abstract : to against the fact of the commercial available white noise generators are very expensive which is not good for general operations , a simple and effective limited band white noise generator is design . the generator is using the feature of dual polarity transistor , i . e . , the power spectrurn density of particulate noise is not related to frequency in very wide band and close to white noise . the concrete circuit is also given
  文摘:针对市售白噪声发生器价格昂贵，不利于一般场合使用的问题，介绍利用双极性晶体管散粒噪声功率谱密度在非常宽的范围内与频率无关，属白噪声这一特性，设计了一种简捷、有效的限带白噪声发生器，并给出了具体电路。
• This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages , and then through using radio frequency bipolar junction transistor , designed a lc voltage controlled oscillator which was emulated by advance design system . in addition , it also implemented the design and debugged the hardware circuit
  本文第一次实验采用视频信号直接控制vco谐振回路变容二极管的方式实现频率调制,并且利用射频双极性晶体管( bjt )设计了一种lc压控振荡器,通过ads软件进行了参数仿真,最后进行了硬件电路的制作和调试。
• There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ) , gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ) . thanks to the advantages , such as , wide frequency , easy power supply , good stability , the ldmos fet has used in the motion telecommunication
  目前在s波段人们常用的放大器有双极性晶体管( bjt ) 、砷化镓场效应晶体管( gaasmosfet ) 、边缘扩散场效应晶体管（ ldmosfet ）等，由于ldmosfet具有频带宽、供电方便、稳定可靠等优势，目前已经广泛用于移动通信3g的研究。
• The most effective converter that fits for such kind of application is a well - known full - bridge three - phase vsi ( voltage source inverter ) converter with igbt ( insolated gate bipolar transistor ) modules , which can be used in wind power generation system or other general purpose utilizations such as asd ( adjustable speed drive ) , active rectifiers , ac power supplies , and so forth
  最适合的变换器就是igbt (集成门极双极性晶体管)三相全桥电压源变换器,这种拓扑结构的变换器可以应用到风力发电系统或者其他通用的场合,比如asd (变速驱动)系统、有源整流、交流电源等等。

• 双极性晶体管的法语：Transistor bipolaire
• 双极性晶体管的日语：バイポーラトランジスタ
• 双极性晶体管的韩语：접합형 트랜지스터
• 双极性晶体管的俄语：Биполярный транзистор
• 双极性晶体管的阿拉伯语：ترانزستور ثنائي القطب;
• 双极性晶体管的印尼文：transistor sambungan dwikutub;